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Vacuum evaporation
Simulation of distribution of
film thickness
(1) On rotating substrate
(2) Comparison with theoretical values
(3) Comparison with experiments regarding dependency of
Argon gas pressure
bill
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(1) Model
xx
yy
zz
Substrate
R=100R=100
Evaporation source :
Φ=0.2
[[cm]cm]
Absorbed wallAbsorbed wall
9090
100100
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(1) Comparison of particle fluxes
Stationary substrate
Max. :0.1245×1020
Min. :0.0075×1020
Rotating substrate
Max.:0.4276×1019
Min. :0.3802×1019
Unit:[/mUnit:[/m2/s]/s]
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Substrate
Flow
out
Evaporation source
1) Point
2) Surface(5mm square)
[cm]
Material:Al
Temperature:1000 [K]
Flux: 1.8×1017 [#/cm2/s]
(2) Model
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(2) Distribution of film thickness
Point source
Substrate
θ
A
dω
O
r0
θ
r
Φ
Small surface source
cos3θ cos4θ (Φ=θ)
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(2) Distribution of particle flux and pressure
Point source Small surface source
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(2) Distribution of particle flux
θ
膜
厚
分
布
膜
厚
分
布
AngleAngle
pointpoint small surfacesmall surface
Fi
lm
th
ic
kn
es
s
Fi
lm
th
ic
kn
es
s
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(3) Equipment/Model
Experiment by
Associate Prof.
M. Nakamura
Faculty of engineering
Chiba Univ.
MassMass ::197amu197amu
DiameterDiameter ::174pm ( 1.74174pm ( 1.74ÅÅ))
TemperatureTemperature::14001400℃℃ (1673 [K] )(1673 [K] )
FluxFlux ::0.874mg/sec (2.6565 X100.874mg/sec (2.6565 X101818 [#/sec] )[#/sec] )
Blue colored wallBlue colored wall
isis
partition wallpartition wall
SubstrateSubstrateSurfaceSurface
evaporation sourceevaporation source
EnlargementEnlargement
Center lineCenter line
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11.15 C
B
A
A = 1.7
B = 0.7
C = 0.85
Unit:cm
24
12
1212
Symmetric boundary
X
Z
Y
Half model in
Y-direction
Evaporation
surface
Substrate
13
7.5 8
(3) Model
Absorbed wall except
symmetric and inflow
boundary
PartitionPartition
wallwall
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11.15
Unit:cm
24
12
1212
X
Z
Y
Substrate
2.05
X
Observed point
(3) Observed point of film thickness
24
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(3)Comparison with simulation and experiment
of film thickness
RGS3D
Ar gas pressure dependencyAr gas pressure dependency
N
or
m
al
ize
d
by
m
ax
im
um
va
lu
e
N
or
m
al
ize
d
by
m
ax
im
um
va
lu
e
Ar gas pressure [Pa]Ar gas pressure [Pa]
Exp.Exp.
In this simulation,In this simulation,
gas flow of Ar is neglected.gas flow of Ar is neglected.
So there are slightly differences.So there are slightly differences.
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(3)Distribution of speed of incident particles to substrate
Speed of incident particles [m/s]Speed of incident particles [m/s]
Frequency distribution of speedFrequency distribution of speed
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(3)Spatial distribution of density,pressure, etc.
DensityDensity
TemperatureTemperature
PressurePressure
Particle flux and VelocityParticle flux and Velocity
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Emission coeff. and emitted angular dist.Emission coeff. and emitted angular dist.
Emitted angular dist.Emitted angular dist. Emitted angular dist.Emitted angular dist.
Emitted angleEmitted angle Emitted angleEmitted angle
Pr
ob
ab
ili
ty
Pr
ob
ab
ili
ty
Pr
ob
ab
ili
ty
(N
or
m
al
iz
ed
)
Pr
ob
ab
ili
ty
(N
or
m
al
iz
ed
)
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Emission coeff. And speed dist.Emission coeff. And speed dist.((Al 1000[K]Al 1000[K]))
Speed distributionSpeed distribution Speed distributionSpeed distribution
Pr
ob
ab
ili
ty
Pr
ob
ab
ili
ty
Pr
ob
ab
ili
ty
(N
or
m
al
iz
ed
)
Pr
ob
ab
ili
ty
(N
or
m
al
iz
ed
)
Speed [m/s]Speed [m/s] Speed [m/s]Speed [m/s]
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Substrate
Domain :100mm cubic
Evaporation source :47.5