BU508AF 参数

PhilipsSemiconductorsProductspecificationSiliconDiffusedPowerTransistorBU508AFGENERALDESCRIPTIONHighvoltage,high-speedswitchingnpntransistorsinafullyisolatedSOT199envelope,primarilyforuseinhorizontaldeflectioncircuitsofcolourtelevisionreceivers.QUICKREFERENCEDATASYMBOLPARAMETERCONDITIONSTYP.MAX.UNITVCESMCollector-emittervoltagepeakvalueVBE=0V-1500VVCEOCollector-emittervoltage(openbase)-700VICCollectorcurrent(DC)-8AICollectorcurrentpeakvalue-15ACM≤PtotTotalpowerdissipationThs25˚C-34WVCEsatCollector-emittersaturationvoltageIC=4.5A;IB=1.6A-1.0VICollectorsaturationcurrentf=16kHz4.5-ACsatµtfFalltimeICsat=4.5A;f=16kHz0.7-sPINNING-SOT199PINCONFIGURATIONSYMBOLPINDESCRIPTIONccase1base2collectorb3emittercaseisolated123eLIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMaximumRatingSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVCESMCollector-emittervoltagepeakvalueVBE=0V-1500VVCEOCollector-emittervoltage(openbase)-700VICCollectorcurrent(DC)-8AICMCollectorcurrentpeakvalue-15AIBBasecurrent(DC)-4AIBasecurrentpeakvalue-6ABM≤PtotTotalpowerdissipationThs25˚C-34WTstgStoragetemperature-65150˚CTjJunctiontemperature-150˚CTHERMALRESISTANCESSYMBOLPARAMETERCONDITIONSTYP.MAX.UNITRthj-hsJunctiontoheatsinkwithoutheatsinkcompound-3.7K/WRthj-hsJunctiontoheatsinkwithheatsinkcompound-2.8K/WRthj-aJunctiontoambientinfreeair35-K/WJuly19981Rev1.200PhilipsSemiconductorsProductspecificationSiliconDiffusedPowerTransistorBU508AFISOLATIONLIMITINGVALUE&CHARACTERISTICThs=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT≤VisolRepetitivepeakvoltagefromallR.H.65%;cleananddustfree-2500VthreeterminalstoexternalheatsinkCisolCapacitancefromT2toexternalf=1MHz-22-pFheatsinkSTATICCHARACTERISTICSThs=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT1ICESCollectorcut-offcurrentVBE=0V;VCE=VCESMmax--1.0mAICESVBE=0V;VCE=VCESMmax;--2.0mATj=125˚CIEBOEmittercut-offcurrentVEB=6.0V;IC=0A--10mAVCEOsusCollector-emittersustainingvoltageIB=0A;IC=100mA;700--VL=25mHVCEsatCollector-emittersaturationvoltagesIC=4.5A;IB=1.6A--1.0VVBEsatBase-emittersaturationvoltageIC=4.5A;IB=2A--1.1VhFEDCcurrentgainIC=100mA;VCE=5V61330-DYNAMICCHARACTERISTICSThs=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSTYP.MAX.UNITfTTransitionfrequencyatf=5MHzIC=0.1A;VCE=5V7-MHzCCCollectorcapacitanceatf=1MHzVCB=10V125-pFSwitchingtimes(16kHzlineI=4.5A;L1mH;C=4nFCsatcµfbdeflectioncircuit)IB(end)=1.4A;LB=6H;-VBB=-4V;-IBM=2.25AtTurn-offstoragetime6.5-µssµtfTurn-offfalltime0.7-s1Measuredwithhalfsine-wavevoltage(curvetracer).July19982Rev1.200PhilipsSemiconductorsProductspecificationSiliconDiffusedPowerTransistorBU508AFICsat+50v90%100-200RIC10%HorizontaltftOscilloscopetsIBVerticalIBendt100R1R6V30-60Hz-IBMFig.1.TestcircuitforVCEOsust.Fig.4.Switchingtimesdefinitions.IC/mA+150vnominaladjustforICsat1mH250200IBendLBD.U.T.BY22810012nF0-VBBVCE/VminVCEOsustFig.2.OscilloscopedisplayforVCEOsust.Fig.5.Switchingtimestestcircuit.ICsathFEBU508ADTRANSISTOR100ICDIODEtIBIBend10t20us26us64usVCE10.1110tIC/AFig.3.Switchingtimeswaveforms.Fig.6.TypicalDCcurrentgain.hFE=f(IC)parameterVCEJuly19983Rev1.200PhilipsSemiconductorsProductspecificationSiliconDiffusedPowerTransistorBU508AFVCESAT/VBU508ADZthK/Wbu508ax1100.90.80.510.70.20.10.60.050.10.50.020.4ptp0.30.01PDtD=0T0.2t0.1T0.00101.0E-071.0E-051E-031.0E-011.0E+10.11IC/A10t/sFig.7.Typicalcollector-emittersaturationvoltage.Fig.10.Transientthermalimpedance.VCEsat=f(IC);parameterIC/IBZthj-hs=f(t);parameterD=tp/TVBESAT/VBU508ADPD%NormalisedPowerDerating1.4120withheatsinkcompound1101001.29080IC=6A70601IC=4.5A5040IC=3A300.8201000.602040608010012014001234IB/AThs/CFig.8.Typicalbase-emittersaturationvoltage.Fig.11.Normalisedpowerdissipation.⋅VBEsat=f(IB);parameterICPD%=100PD/PD25˚C=f(Ths)VCESAT/VBU508AD101IC=6AIC=4.5AIC=3A0.10.1110IB/AFig.9.Typicalcollector-emittersaturationvoltage.VCEsat=f(IB);parameterICJuly19984Rev1.200PhilipsSemiconductorsProductspecificationSiliconDiffusedPowerTransistorBU508AFIC/AIC/A100100=0.01=0.01ICMmaxICMmaxtp=tp=10ICmax10ICmaxII10usII10usPtotmaxPtotmax11100us100us1ms1msII0.10.110ms10msDCDC0.010.0111010010001101001000VCE/VVCE/VFig.12.Forwardbiassafeoperatingarea.Ths=25˚CFig.13.Forwardbiassafeoperatingarea.Ths=25˚CIRegionofpermissibleDCoperation.IRegionofpermissibleDCoperation.IIExtensionforrepetitivepulseoperation.IIExtensionforrepetitivepulseoperation.NB:MountedwithheatsinkcompoundandNB:Mountedwithoutheatsinkcompoundand30±5newtonforceonthecentreof30±5newtonforceonthecentreoftheenvelope.theenvelope.July19985Rev1.200PhilipsSemiconductorsProductspecificationSiliconDiffusedPowerTransistorBU508AFMECHANICALDATADimensionsinmm15.3max5.2maxNetMass:5.5g0.73.17.33.33.2o6.2455.821.5maxseatingplane3.5max3.5nottinned15.7min1232.1max1.20.7max1.00.4M2.05.455.45Fig.14.SOT199;Theseatingplaneiselectricallyisolatedfromallterminals.Notes1.RefertomountinginstructionsforF-packenvelopes.2.EpoxymeetsUL94V0at1/8".July19986Rev1.200PhilipsSemiconductorsProductspecificationSiliconDiffusedPowerTransistorBU508AFDEFINITIONSDatasheetstatusObjectivespecificationThisdatasheetcontainstargetorgoalspecificationsforproductdevelopment.PreliminaryspecificationThisdatasheetcontainspreliminarydata;supplementarydatamaybepublishedlater.ProductspecificationThisdatasheetcontainsfinalproductspecifications.LimitingvaluesLimitingvaluesaregiveninaccordancewiththeAbsoluteMaximumRatingSystem(IEC134).Stressaboveoneormoreofthelimitingvaluesmaycausepermanentdamagetothedevice.ThesearestressratingsonlyandoperationofthedeviceattheseoratanyotherconditionsabovethosegivenintheCharacteristicssectionsofthisspecificationisnotimplied.Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability.ApplicationinformationWhereapplicationinformationisgiven,itisadvisoryanddoesnotformpartofthespecification.PhilipsElectronicsN.V.1998Allrightsarereserved.Reproductioninwholeorinpartisprohibitedwithoutthepriorwrittenconsentofthecopyrightowner.Theinformationpresentedinthisdocumentdoesnotformpartofanyquotationorcontract,itisbelievedtobeaccurateandreliableandmaybechangedwithoutnotice.Noliabilitywillbeacceptedbythepublisherforanyconsequenceofitsuse.Publicationthereofdoesnotconveynorimplyanylicenseunderpatentorotherindustrialorintellectualpropertyrights.LIFESUPPORTAPPLICATIONSTheseproductsarenotdesignedforuseinlifesupportappliances,devicesorsystemswheremalfunctionoftheseproductscanbereasonablyexpectedtoresultinpersonalinjury.PhilipscustomersusingorsellingtheseproductsforuseinsuchapplicationsdosoattheirownriskandagreetofullyindemnifyPhilipsforanydamagesresultingfromsuchimproperuseorsale.July19987Rev1.200