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Photops™
Photodiode-Amplifier Hybrids
n FEATURES
• Detector/Amplifier
Combined
• Adjustable Gain/Bandwidth
• Low Noise
• Wide Bandwidth
• DIP Package
• Large Active Area
n APPLICATIONS
• General Purpose Light
Detection
• Laser Power Monitoring
• Medical Analysis
• Laser Communications
• Bar Code Readers
• Industrial Control Sensors
• Pollution Monitoring
• Guidance Systems
• Colorimeter
The Photop™ Series, combines a photodiode with an operational amplifier
in the same package. Photops™ general-purpose detectors have a
spectral range from either �50 nm to 1100 nm or �00 nm to 1100nm. They
have an integrated package ensuring low noise output under a variety of
operating conditions. These op-amps are specifically selected by OSI
Optoelectronics engineers for compatibility to our photodiodes.
Among many of these specific parameters are low noise, low drift and
capability of supporting a variety of gains and bandwidths determined by
the external feedback components. Operation from DC level to several
MHz is possible in an either unbiased configuration for low speed, low
drift applications or biased for faster response time. LN-Series Photops™
are to be used with OV-bias.
Any modification of the above devices is possible. The modifications
can be simply adding a bandpass optical filter, integration of additional
chip (hybrid) components inside the same package, utilizing a different
op-amp, photodetector replacement, modified package design and / or
mount on PCB or ceramic. For your specific requirements, contact one
of our Applications Engineers.
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Photops™ (Photodiode Specifications)
Typical Electro-Optical Specifications at TA=23ºC
¶ For mechanical drawings please refer to pages 58 thru 69.
** LN – Series Devices are to be used with a 0V Bias.
* Non-Condensing temperature and Storage Range, Non-Condensing Environment.
# OSI-515 replaces UDT-455HS
M
o
d
e
l
N
u
m
b
e
r Active Area
Responsivity
(A/W)
Capacitance
(pF)
Dark
Current
(nA) S
h
u
n
t
R
e
si
st
a
n
ce
(M
Ω
)
NEP
(W/√Hz)
R
e
v
e
rs
e
V
o
lt
a
g
e Temp.*
Range
(°C)
Package Style
A
re
a
(m
m
2
)
D
im
e
n
si
o
n
(m
m
)
254 nm 970 nm 0 V -10 V -10 V
-10
mV
0 V
254 nm
-10 V
970 nm V
O
p
e
ra
ti
n
g
S
to
ra
g
e
m
in
.
ty
p
.
m
in
.
ty
p
.
ty
p
.
ty
p
.
ty
p
.
m
a
x
.
ty
p
.
ty
p
.
ty
p
.
m
a
x
.
350-1100 nm Spectral Range
UDT-451
5.1 2.54 φ
--- 0.60 0.65
85 15 0.25 3
---
1.4 e -14
30**
0
~
+
7
0
-3
0
~
+
1
0
0
29 / DIP
UDT-455
30 / TO-5UDT-455LN**
OSI-515#
UDT-020D 16 4.57 φ 330 60 0.5 10 1.9 e -14 31 / TO-8
UDT555D 100 11.3 φ 1500 300 2 25 3.9 e -14 32 / Special
200-1100 nm Spectral Range
UDT-455UV
5.1 2.54 φ
0.10 0.14 ---
300
---
100 9.2 e -14
--- 5**
30 / TO-5
UDT-455UV/LN**
UDT-020UV 16 4.57 φ 1000 50 1.3 e -13 31 / TO-8
UDT-055UV 50 7.98 φ 2500 20 2.1 e -13 32 / Special
UDT-555UV
100 11.3 φ 4500 10 2.9 e -13 32 / Special
UDT-555UV/LN**
Operational Amplifier Specifications Electro-Optical Specifications at TA=23 °C
M
o
d
e
l
N
u
m
b
e
r
Supply Voltage
Quiescent
Supply
Current
(mA)
Input Offset
Voltage
T
e
m
p
.
C
o
e
ff
ic
ie
n
t
In
p
u
t
O
ff
se
t
V
o
lt
a
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e
Input Bias
Current
Gain
Bandwidth
Product
Slew
Rate
Open
Loop
Gain, DC
Input
Noise
Voltage
Temp.*
Range
(°C)
1
0
0
H
z
1
k
H
z
1
k
H
z
± 15 V mV µV / °C pA MHz V / µs V /mV nV/ √Hz fA/ √Hz
m
in
.
ty
p
.
m
a
x
.
ty
p
.
m
a
x
.
ty
p
.
m
a
x
.
ty
p
.
m
a
x
.
ty
p
.
m
a
x
.
m
in
.
ty
p
.
m
in
.
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p
.
m
in
.
ty
p
.
ty
p
.
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p
.
ty
p
.
UDT-451 --- ±15 ±18 1.4 2.5 3.0 6.0 10 --- 30 200 --- 4.0 --- 13 50 150 --- 18 10
UDT-455
--- ±15 ±18 2.8 5.0 0.5 3 4 30 ±80 ±400 3.0 5.4 5 9 50 200 20 15 10
UDT-455UV
UDT-020D
UDT-020UV
OSI-515# --- ±15 ±18 6.5 7.2 1 3 10 --- ±15 ±40 23 26 125 140 3 6.3 --- 12 10
UDT-455LN**
±5 ±15 ±18 0.9 1.8 0.26 1 --- 20 0.15 0.3 0.5 1 0.5 3 50 2500 78 27 0.22
UDT-455UV/LN**
UDT-055UV
--- ±15 ±22 2.7 4.0 0.4 1 3 10 ±40 ±200 3.5 5.7 7.5 11 75 220 20 15 10UDT-555D
UDT-555UV
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�1
UDT-455,
UDT-555D, 555UV, 055UV
OSI-515: pin 1 & 5 are N/C
(No offset adjustment needed).
UDT-020D, 020UV
UDT-451, 455LN, 455UV/LN
UDT-555UV/LN
Photop Series
Schematic Diagrams
The output voltage is proportional to the light intensity of the light and is
given by:
(1)
Frequency Response (Photodiode/Amplifier Combination)
The frequency response of the photodiode / amplifier combination is
determined by the characteristics of the photodetector, pre-amplifier
as well as the feedback resistor (RF) and feedback capacitor (CF). For a
known gain, (RF), the �dB frequency response of the detector/pre-amp
combination is given by:
(2)
However, the desired frequency response is limited by the Gain Bandwidth
Product (GBP) of the op-amp. In order to have a stable output, the values
of the RF and CF must be chosen such that the �dB frequency response of
the detector / pre-amp combination, be less than the maximum frequency
of the op-amp, i.e. f�dB ≤ fmax.
(3)
where CA is the amplifier input capacitance.
In conclusion, an example for frequency response calculations, is given
below. For a gain of 108, an operating frequency of 100 Hz, and an op-
amp with GBP of 5 MHz:
(4)
Thus, for CF = 15.9 pF, CJ = 15 pF and CA = 7 pF, fmax is about 14.5 kHz.
Hence, the circuit is stable since f�dB ≤ fmax.
For more detailed application specific discussions and further reading,
refer to the APPLICATION NOTES INDEX in the catalog.
Note: The shaded boxes represent the Photop™ components and
their connections. The components outside the boxes are typical
recommended connections and components.
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For Further Assistance
Please Call One of Our Experienced
Sales and Applications Engineers
310-978-0516
- Or -
On the Internet at
www.osioptoelectronics.com
57
1. Parameter Definitions:
A = Distance from top of chip to top of glass.
a = Photodiode Anode.
B = Distance from top of glass to bottom of case.
c = Photodiode Cathode
(Note: cathode is common to case in metal package products unless otherwise noted).
W = Window Diameter.
F.O.V. = Filed of View (see definition below).
2. Dimensions are in inches (1 inch = 25.4 mm).
3. Pin diameters are 0.018 ± 0.002" unless otherwise specified.
4. Tolerances (unless otherwise noted)
General: 0.XX ±0.01"
0.XXX ±0.005"
Chip Centering: ±0.010"
Dimension ‘A’: ±0.015"
5. Windows
All ‘UV’ Enhanced products are provided with QUARTZ glass windows,
0.0�7 ± 0.00�" thick.
All ‘XUV’ products are provided with removable windows.
All ‘DLS’ PSD products are provided with A/R coated glass windows.
All ‘FIL’ photoconductive and photovoltaic products are epoxy filled instead of
glass windows.
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6�
Mechanical Specifications
All units in inches. Pinouts are bottom view.
UDT-455
UDT-455LN
UDT-455UV
UDT-455UV/LN
OSI-515
OSI-515 pin 1 & 5 are N/C
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