PMP5501Y,115;PMP5501G,115;PMP5501V,115;PMP5501G,135;PMP5501Y,135;中文规格书,Datasheet资料

PMP5501V;PMP5501G;PMP5501Yhttp1.Productprofile1.1GeneraldescriptionPNP/PNPmatcheddoubletransistorsinsmallSurface-MountedDevice(SMD)plasticpackages.ThetransistorsintheSOT666andSOT363(SC-88)packagesarefullyisolatedinternally.1.2FeaturesnCurrentgainmatchingnBase-emittervoltagematchingnCommonemitterconfigurationforSOT353typesnApplication-optimizedpinout1.3ApplicationsnCurrentmirrornDifferentialamplifier1.4QuickreferencedataPNP/PNPmatcheddoubletransistorsRev.03—28August2009ProductdatasheetTable1.ProductoverviewTypenumberPackagePNP/PNPhFE1/hFE20.98complementNPN/NPNcomplementNXPJEITAPMP5501VSOT666-PMP5201VPMP4501VPMP5501GSOT353SC-88APMP5201GPMP4501GPMP5501YSOT363SC-88PMP5201YPMP4501YTable2.QuickreferencedataSymbolParameterConditionsMinTypMaxUnitPertransistorVCEOcollector-emittervoltageopenbase--−45VICcollectorcurrent--−100mAhFEDCcurrentgainVCE=−5V;IC=−2mA200290450://oneic.com/httpNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistors[1]Thesmallerofthetwovaluesistakenasthenumerator.[2]Thesmallerofthetwovaluesissubtractedfromthelargervalue.2.Pinninginformation3.OrderinginformationPerdevicehFE1/hFE2hFEmatchingVCE=−5V;IC=−2mA[1]0.951-VBE1−VBE2VBEmatchingVCE=−5V;IC=−2mA[2]--2mVTable2.Quickreferencedata…continuedSymbolParameterConditionsMinTypMaxUnitTable3.PinningPinDescriptionSimplifiedoutlineSymbolSOT666;SOT3631baseTR12baseTR23collectorTR24emitterTR25emitterTR16collectorTR1SOT3531baseTR12emitterTR1,TR23baseTR24collectorTR25collectorTR1001aab555645132006aaa550321456TR1TR213245006aaa55154123TR1TR2Table4.OrderinginformationTypenumberPackageNameDescriptionVersionPMP5501V-plasticsurface-mountedpackage;6leadsSOT666PMP5501GSC-88Aplasticsurface-mountedpackage;5leadsSOT353PMP5501YSC-88plasticsurface-mountedpackage;6leadsSOT363PMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August20092of14://oneic.com/httpNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistors4.Marking[1]*=-:madeinHongKong*=p:madeinHongKong*=t:madeinMalaysia*=W:madeinChina5.Limitingvalues[1]DevicemountedonanFR4Printed-CircuitBoard(PCB),single-sidedcopper,tin-platedandstandardfootprint.[2]Reflowsolderingistheonlyrecommendedsolderingmethod.Table5.MarkingcodesTypenumberMarkingcode[1]PMP5501VEDPMP5501GR4*PMP5501YS6*Table6.LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).SymbolParameterConditionsMinMaxUnitPertransistorVCBOcollector-basevoltageopenemitter-−50VVCEOcollector-emittervoltageopenbase-−45VVEBOemitter-basevoltageopencollector-−5VICcollectorcurrent-−100mAICMpeakcollectorcurrentsinglepulse;tp≤1ms-−200mAPtottotalpowerdissipationTamb≤25°CSOT666[1][2]-200mWSOT353[1]-200mWSOT363[1]-200mWPerdevicePtottotalpowerdissipationTamb≤25°CSOT666[1][2]-300mWSOT353[1]-300mWSOT363[1]-300mWTjjunctiontemperature-150°CTambambienttemperature−65+150°CTstgstoragetemperature−65+150°CPMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August20093of14://oneic.com/httpNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistors6.Thermalcharacteristics[1]DevicemountedonanFR4PCB,single-sidedcopper,tin-platedandstandardfootprint.[2]Reflowsolderingistheonlyrecommendedsolderingmethod.7.CharacteristicsTable7.ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitPertransistorRth(j-a)thermalresistancefromjunctiontoambientinfreeairSOT666[1][2]--625K/WSOT353[1]--625K/WSOT363[1]--625K/WPerdeviceRth(j-a)thermalresistancefromjunctiontoambientinfreeairSOT666[1][2]--416K/WSOT353[1]--416K/WSOT363[1]--416K/WTable8.CharacteristicsTamb=25°Cunlessotherwisespecified.SymbolParameterConditionsMinTypMaxUnitPertransistorICBOcollector-basecut-offcurrentVCB=−30V;IE=0A--−15nAVCB=−30V;IE=0A;Tj=150°C--−5µAIEBOemitter-basecut-offcurrentVEB=−5V;IC=0A--−100nAhFEDCcurrentgainVCE=−5V;IC=−10µA-250-VCE=−5V;IC=−2mA200290450VCEsatcollector-emittersaturationvoltageIC=−10mA;IB=−0.5mA-−50−200mVIC=−100mA;IB=−5mA-−200−400mVVBEsatbase-emittersaturationvoltageIC=−10mA;IB=−0.5mA[1]-−760-mVIC=−100mA;IB=−5mA[1]-−920-mVPMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August20094of14://oneic.com/httpNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistors[1]VBEsatdecreasesbyabout1.7mV/Kwithincreasingtemperature.[2]VBEdecreasesbyabout2mV/Kwithincreasingtemperature.[3]Thesmallerofthetwovaluesistakenasthenumerator.[4]Thesmallerofthetwovaluesissubtractedfromthelargervalue.VBEbase-emittervoltageVCE=−5V;IC=−2mA[2]−600−650−700mVVCE=−5V;IC=−10mA[2]--−760mVCccollectorcapacitanceVCB=−10V;IE=ie=0A;f=1MHz--2.2pFCeemittercapacitanceVEB=−0.5V;IC=ic=0A;f=1MHz-10-pFfTtransitionfrequencyVCE=−5V;IC=−10mA;f=100MHz100175-MHzNFnoisefigureVCE=−5V;IC=−0.2mA;RS=2kΩ;f=10Hzto15.7kHz-1.6-dBVCE=−5V;IC=−0.2mA;RS=2kΩ;f=1kHz;B=200Hz-3.1-dBPerdevicehFE1/hFE2hFEmatchingVCE=−5V;IC=−2mA[3]0.951-VBE1−VBE2VBEmatchingVCE=−5V;IC=−2mA[4]--2mVTable8.Characteristics…continuedTamb=25°Cunlessotherwisespecified.SymbolParameterConditionsMinTypMaxUnitPMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August20095of14://oneic.com/httpNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistorsTamb=25°CVCE=−5V(1)Tamb=100°C(2)Tamb=25°C(3)Tamb=−55°CFig1.Collectorcurrentasafunctionofcollector-emittervoltage;typicalvaluesFig2.DCcurrentgainasafunctionofcollectorcurrent;typicalvaluesIC/IB=20(1)Tamb=−55°C(2)Tamb=25°C(3)Tamb=100°CIC/IB=20(1)Tamb=100°C(2)Tamb=25°C(3)Tamb=−55°CFig3.Base-emittersaturationvoltageasafunctionofcollectorcurrent;typicalvaluesFig4.Collector-emittersaturationvoltageasafunctionofcollectorcurrent;typicalvalues006aaa540VCE(V)0−10−8−4−6−2−0.08−0.12−0.04−0.16−0.20IC(A)0−0.25IB(mA)=−2.5−0.5−0.75−1.0−1.25−1.5−1.75−2.0−2.25006aaa541200400600hFE0IC(mA)−10−2−103−102−10−1−10−1(1)(2)(3)006aaa542IC(mA)-10-1-103-102-1-10-0.5-0.9-1.3-0.3-0.7-1.1VBEsat(V)-0.1(1)(2)(3)006aaa543-1-10-1-10VCEsat(V)-10-2IC(mA)-10-1-103-102-1-10(1)(2)(3)PMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August20096of14://oneic.com/httpNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistorsVCE=−5V;Tamb=25°CVCE=−5V;Tamb=25°CFig5.Base-emittervoltageasafunctionofcollectorcurrent;typicalvaluesFig6.Transitionfrequencyasafunctionofcollectorcurrent;typicalvaluesf=1MHz;Tamb=25°Cf=1MHz;Tamb=25°CFig7.Collectorcapacitanceasafunctionofcollector-basevoltage;typicalvaluesFig8.Emittercapacitanceasafunctionofemitter-basevoltage;typicalvalues006aaa544−0.6−0.8−1VBE(V)−0.4IC(mA)−10−1−103−102−1−10IC(mA)−1−102−10006aaa545102103fT(MHz)10VCB(V)0−10−8−4−6−2006aaa5464268Cc(pF)0006aaa547VEB(V)0−6−4−291171315Ce(pF)5PMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August20097of14://oneic.com/htNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistors8.Applicationinformation9.PackageoutlineFig9.CurrentmirrorFig10.Differentialamplifier006aaa524VCCloutR1TR2TR1006aaa526IN2IN1TR2TR1OUT2V−V+OUT1Fig11.PackageoutlineSOT666Fig12.PackageoutlineSOT353(SC-88A)Dimensionsinmm04-11-081.71.51.71.51.31.110.180.080.270.170.5pin1index1234560.60.50.30.104-11-16Dimensionsinmm0.250.100.30.21.30.652.22.01.351.152.21.81.10.80.450.151324506-03-16Dimensionsinmm0.250.100.30.2pin1index1.30.652.22.01.351.152.21.81.10.80.450.15132465PMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August20098of14Fig13.PackageoutlineSOT363(SC-88)tp://oneic.com/httpNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistors10.Packinginformation[1]Forfurtherinformationandtheavailabilityofpackingmethods,seeSection14.[2]T1:normaltaping[3]T2:reversetaping11.SolderingTable9.PackingmethodsTheindicated-xxxarethelastthreedigitsofthe12NCorderingcode.[1]TypenumberPackageDescriptionPackingquantity30004000800010000PMP5501VSOT6662mmpitch,8mmtapeandreel---315-4mmpitch,8mmtapeandreel--115--PMP5501GSOT3534mmpitch,8mmtapeandreel-115---135PMP5501YSOT3634mmpitch,8mmtapeandreel;T1[2]-115---1354mmpitch,8mmtapeandreel;T2[3]-125---165Reflowsolderingistheonlyrecommendedsolderingmethod.Fig14.ReflowsolderingfootprintSOT666solderlandsplacementareaoccupiedareasolderpastesot666_fr2.752.452.11.60.4(6×)0.55(2×)0.25(2×)0.6(2×)0.65(2×)0.3(2×)0.325(4×)0.45(4×)0.5(4×)0.375(4×)1.721.71.0750.538DimensionsinmmPMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August20099of14://oneic.com/httpNXPSemiconductorsPMP5501V;PMP5501G;PMP5501YPNP/PNPmatcheddoubletransistorsDimensionsinmmFig15.ReflowsolderingfootprintSOT353(SC-88A)DimensionsinmmFig16.WavesolderingfootprintSOT353(SC-88A)msa3661.202.400.50(4×)0.400.902.100.50(4×)0.60(1×)2.352.65solderlandssolderresistoccupiedareasolderpastesot353_fw1.31.34.5114.91.51.52.52.250.850.851.2251.225solderlandssolderresistoccupiedareapreferredtransportdirectionduringsolderingDimensionsinmmPMP5501V_G_Y_3©NXPB.V.2009.Allrightsreserved.ProductdatasheetRev.03—28August200910of14://oneic.com/分销商库存信息:NXPPMP5501Y,115PMP5501G,115PMP5501V,115PMP5501G,135PMP5501Y,135