半导体能带宽度的计算公式BANDGAP

The optical data were analyzed at the near-absorption edge using the equation21 α=K(hv-E ) n/2/ hv (1) g where K and n are constants and E g is the band gap of the semiconductors. The value of n is equal to 1 for a direct band gap material. Apparently the plot of (αhv)2 versus hv (Figure 2b) gives E g for a direct allowed transition when the linear region is extrapolated to zero ordinate. Subramanian, B; Sanjeeviraja, C.; Jayachandran, M. J. Crystal Growth 2002, 234, 421-426 (αhv)2=K(hv-E ) g 将紫谱图横坐标换为hv,纵坐标换为吸光度与hv的乘积 在Origin中横坐标和纵坐标的变化: col(A)=1242.375/col(A) col(B)=col(B)*col(B)*col(A)*col(A)