半导体封装制程与设备材料知识介绍PPT课件

半导体封装制程与设备材料知识介绍.半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）－封装后段（MARK-PLANT）－测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。.半导体制程.封装型式概述IC封装型式可以分为两大类，一为引脚插入型，另一为面黏着型.封裝型式(PACKAGE).封裝型式.封裝型式.封裝型式.封裝型式.封裝型式.SanDiskAssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBondSMT(Optional).半导体设备供应商介绍-前道部分PROCESSVENDORMODELSMT-PRINTERDEKHOR-2ISMT–CHIPMOUNTSIMENSHS-60TAPINGNITTODR3000-III　INLINEGRINDER&POLISHACCRETECHPG300RMSTANDALONEGRINDERDISCO8560DETAPINGNITTOMA3000　WAFERMOUNTERNITTOMA3000DICINGSAWDISCODFD6361TSKA-WD-300T.半导体设备供应商介绍-前道部分PROCESSVENDORMODELDIEBONDHITACHIDB700ESECESEC2007/2008ASMASM889898CUREOVENC-SUNQDM-4SWIREBONDERK&SK&SMAXUMULTRASKWUTC-2000ASMEagle60PLASMACLEANMARCHAP1000TEPLATEPLA400MoldTOWAYPS-SERIESASAOMEGA3.8.半导体设备供应商介绍PROCESSVENDORMODELINKMARKE&RE&RTECA-PRINTPR-601LASERMARKGPMSE+SE39+SE36+SE45鈦昇BLAZON-2600BALLATTACHVANGUARDVAI6300AMSAMS1500iD/DYAMADACU-1028-1GPMSE00+SH01+SH02+SE07FORMINGYAMADACU-1029-1GPMSEH01+SH02+SH25.半导体设备供应商介绍PROCESSVENDORMODELSINGULATIONGPMSN39+SH52YAMADACUPLATINGMECOEDF+EPL2400AEMSBP2400-EDLEADSCANRVSILS-7700ICOS9450EVER-TECHTS-60.半导体设备供应商介绍.常用术语介绍SOP-StandardOperationProcedureFMEA-FailureModeEffectAnalysisSPC-StatisticalProcessControlDOE-DesignOfExperimentIQC/OQC-Incoming/OutingQualityControlMTBA/MTBF-betweenassit/FailureUPH-UnitsPerHourCPK-品质参数.晶圆研磨(GRINDING)1.GRINDING工艺l         研磨1.研磨分為粗磨與細磨,晶圓粗糙度需小於0.08um..2.細磨厚度在10~20um之間,而二次研磨參數中,細磨厚度為15um(二次研磨變更作業膠膜為230um).3.研磨標準厚度:a.    HSBGA:11~13MIL標準研磨厚度為12MILb.   PBGA:11~16MIL標準研磨厚度為12MIL.c.    LBGA:9.5~10.5MIL標準研磨厚度為10MIL.5.研磨時機器會先量側晶片厚度以此為初始值,粗磨厚度及最終厚度(即細磨要求的厚度)..  Spindle1粗磨spindle2細磨清洗區離心除水離心除水背面朝上Wafer研磨時晶圓與SPINDLE轉向.2.Grinding相关材料ATAPE麦拉BGinding砂轮CWAFERCASSETTLE.工艺对TAPE麦拉的要求：1。MOUNTNodelaminationSTRONG2。SAWADHESIONNodieflyingoffNodiecrack.工艺对麦拉的要求：3。EXPANDINGTAPEDiedistanceELONGATIONUniformity4。PICKINGUPWEAKADHESIONNocontamination.  TAPE種類:a.      ADWILLD-575UV膠膜(黏晶片膠膜白色)厚度150UMb.     ADWILLＧ-295黏晶片膠膜　黑色　厚度　120UMc.      ADWILLS-200熱封式膠帶(去膠膜膠帶)白色厚度７５ＵＭd.     FURUKAWAUC-353EP-110AP(PRE-CUT)UV膠膜白色厚度110ume.      FURUKAWAUC-353EP-110AUV膠膜　白色　厚110umf.       FURUKAWAUC-353EP-110BPUVTAPE白色　厚110um.g.      ADWILLG16P370黑色　厚　80UM.h.      NITTO224SP75UM.3.Grinding辅助设备AWaferThicknessMeasurement厚度测量仪一般有接触式和非接触式光学测量仪两种；BWaferroughnessMeasurement粗糙度测量仪主要为光学反射式粗糙度测量方式；.4.Grinding配套设备ATaping贴膜机BDetaping揭膜机CWaferMounter贴膜机.   Taping需確認wafer是否有破片或污染或者有氣泡等等現象.特别是VOID；上膠膜後容易發生的defect为龟裂或破片；切割正面上膠上膠電腦偵測方向取出背面朝下.Detaping.l  Wafermount Waferframe.晶圓切割(Dicing)1.Dicing设备介绍ADISCO641/651系列BACCERTECH东京精密200T/300T.MainSectionsIntroductionCuttingArea:Spindles(Blade,Flange,CarbonBrush),CuttingTable,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoaderUnits:Spinner,Elevator,Cassette,RotationArm.BladeClose-ViewBladeCuttingWaterNozzleCoolingWaterNozzle.Twin-SpindleStructureRearFrontX-axisspeed:upto600mm/sCuttingspeed:upto80mm/s.AFewConceptsBBD(BladeBrokenDetector)Cutter-set:ContactandOpticalPrecisionInspectionUp-CutandDown-CutCut-inandCut-remain.晶圓切割(Dicing)2.Dicing相关工艺ADieChipping芯片崩角BDieCorrosive芯片腐蚀CDieFlying芯片飞片.Wmax,Wmin,Lmax,DDY,DY規格—DY<0.008mmWmax<0.070mmWmin<0.8*刀厚Lmax<0.035.       切割時之轉速予切速:a.      轉速:指的是切割刀自身的轉速b.     切速:指的是Wafer移動速度.主軸轉速:S1230:30000~45000RPMS1440:30000~45000RPM27HEED:35000~45000RPM27HCCD:35000~45000RPM27HDDC:35000~45000RPM. 切割至膠膜時所能切割之深度UVTAPE:0.100+/-0.005mm(ForLintec)BLUETAPE:0.050+/-0.005mm(ForNittospv224)G-16Tape:0.050+/-0.005mm(ForLintecG-16)UVTape:0.08+/-0.005mm(ForFURUKAWAUC-353EP-110AP).晶圓切割(Dicing)3.Dicing相关材料ATapeBSawBLADE切割刀CDI去离子水、RO纯水.切割刀的規格因所切產品的特性不同(Wafer材質、厚度、切割道寬度)，所需要的切割刀規格也就有所不同，其中規格就包括了刀刃長度、刀刃寬度、鑽石顆粒大小、濃度及Nickelbondhardness軟硬度的選擇，只要任何一種規格的不同，所切出來的品質也就不一樣。P4.Sawblade对製程的影響ProperCutDepthIntoTape(切入膠膜的理想深度)分析:理想的切割深度可防止1.背崩之發生。2.切割街区的DDY理想的切割深度須切入膠膜(Tape)1/3厚度。P11.切割刀的影響DiamondGritSize(鑽石顆粒大小)分析:小顆粒之鑽石1.切割品質較好。2.切割速度不宜太快。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負載電流較小。P15.TAPE粘度对SAW製程的影響MountingTape(膠膜黏力)分析:使用較黏膠膜可獲得1.沒有飛Die。2.較好的切割品質。潛在風險DieAttachprocesspickupdie影響。P10.晶圓切割(Dicing)4.Dicing辅助设备ACO2Bubbler二氧化碳发泡机BDIWater电阻率监测仪CDiamaflow发生器DUV照射机.上片(DieBond)1.DieBond设备介绍AESEC2007/2008系列BALPHASEM8002/9002系列CASM829/889/898系列...上片(DieBond)2.DieBond相关工艺X,YPLACEMENT;BLT;TILT;ROTATIONTHETA;CPKDIEROTATIONTHETAPLACEMENTACCURACYX,Y(CP)BONDLINETHICKNESS(CPK)EXPOYTHICKNESSTILT(CPK)VOID、DIESHARE.上片(DieBond)3.DieBond相关材料ALeadframeBSubstrateCEpoxy银浆DWaferafterSawEMagazine弹夹.SubstrateBasicStructure:CoreAuNiCuSolderMaskBondFingerViaHoleBallPad.BasicInformationCore：玻璃纤维+树脂，0.1-0.4mm镀铜层：25um+/-5um镀镍层：5.0-12.5um镀金层：0.50-1.10umSolderMask：25um+/-5um总厚度：0.21-0.56mmSubstrateDrawing厚度：0.22+/-0.06mmMCEL建议Vendor提供的Substrate厚度：0.24+/-0.04mm.發料烘烤線路形成(內層)AOI自動光學檢測壓合4layer2layer蝕薄銅綠漆線路形成塞孔鍍銅Deburr鑽孔鍍Ni/Au包裝終檢O/S電測成型AOI自動光學檢測出貨BGA基板製造流程(option).上片(DieBond)4.DieBond辅助设备A银浆搅拌机利用公转自转离心力原理脱泡及混合；主要参数有：MIXING/DEFORMINGREVOLUTIONSPEED外加计时器；公转用于去泡；自转用于混合；.BCuringOven无氧化烤箱主要控制要素：N2流量；排气量；profile温度曲线；每箱摆放Magazine数量；.CWafermapping应用.焊线(WireBond)1.WireBond相关工艺PadOpen&BondPadPitchBallSizeBallThicknessLoopheightWirePullBallshortCraterTest.padleadFreeairballiscapturedinthechamfer.Freeairballiscapturedinthechamferpadlead.Freeairballiscapturedinthechamferpadlead.Freeairballiscapturedinthechamferpadlead.Freeairballiscapturedinthechamferpadlead.Formationofafirstbondpadlead.Formationofafirstbondpadlead.FormationofafirstbondpadleadheatPRESSUREUltraSonicVibration.FormationofafirstbondpadleadUltraSonicVibrationheatPRESSURE.Capillaryrisestoloopheightpositionpadlead.Capillaryrisestoloopheightpositionpadlead.Capillaryrisestoloopheightpositionpadlead.Capillaryrisestoloopheightpositionpadlead.Capillaryrisestoloopheightpositionpadlead.Formationofalooppadlead.Formationofalooppadlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.padlead.Formationofasecondbondpadleadheat.Formationofasecondbondpadleadheatheat.padleadheatheat.padleadheatheat.padlead.padlead.padlead.padlead.padlead.padlead.padleadDisconnectionofthetail.padleadDisconnectionofthetail.padleadFormationofanewfreeairball.焊线(WireBond)2.WireBond相关材料LeadframCapillaryGoldWire.Leadfram.CapillaryCapillaryManufacturer(SPT,GAISER,PECO,TOTO…)CapillaryData(Tip,Hole,CD,FA&OR,IC).TIP..……PadPitchPadpitchx1.3=TIPHole..…..WireDiameterWirediameter+0.3~0.5=HCD………Padsize/open/1stBallCD+0.4~0.6=1stBondBallsizeFA&OR….Padpitch(um)FA>1000,4~90/1004,8,11<9011,15ICtype……looptypeCapillary.GoldWireGoldWireManufacturer(Nippon,SUMTOMO,TANAKA….)GoldWireData(WireDiameter,Type,EL,TS).焊线(WireBond)3.WireBond辅助设备AMicroscope用于测loopheightBWirePull拉力计（DAGE4000）CBallShear球剪切力计DPlasma微波/等离子清洗计.BallSizeBallThickness單位:um，Mil量測倍率:50XBallThickness計算60umBPP≧1/2WD=50%60umBPP≦1/2WD=40%~50%BallSizeBallSize&BallThickness.LoopHeight單位:um，Mil量測倍率:20XLoopHeight線長.WirePull1LiftedBond(Rejected)2Breakatneck(Referwire-pullspec)3Breakatwire(Referwire-pullspec)4Breakatstitch(Referstitch-pullspec)5Liftedweld(Rejected).BallShear單位:gramorg/mil²BallShear計算公式Intermetallic（IMC有75%的共晶,ShearStrength標準為＞6.0g/mil²。SHEARSTRENGTH＝BallShear/Area(g/mil²)BallShear=x;BallSize=y;Area=π(y/2)²x/π(y/2)²=zg/mil².PlasmaCleaning的原理：Plasma的产生：电极(电能)Plasma气体(O2,H2,He,Ar..).VacuumChamberOrganicPlasmaPCBSubstrateDie+++++++++++Electrode+PlasmaCleaning机理:.等离子工艺PlasmaProcess气相---固相表面相互作用GasPhase-SolidPhaseInteractionPhysicalandChemical分子级污染物去除MolecularLevelRemovalofContaminants30to300Angstroms可去除污染物包括ContaminantsRemoved难去除污染物包括DifficultContaminantsFingerPrintsFluxGrossContaminantsOxidesEpoxySolderMaskOrganicResiduePhotoresistMetalSalts(NickelHydroxide).NoClean(OrganicContamination)WellCleanedwithPlasma>80o<8oOrganicContaminationvsContactAngleWaterDropChipChip.塑封(Molding)Molding设备介绍ATOWAY1-SERIESBASAONEGA3.8.TowaAutoMoldTraining机器上指示灯的说明：1、绿灯——机器处于正常工作状态；2、黄灯——机器在自动运行过程中出现了报警提示，但机器不会立即停机；3、红灯——机器在自动运行过程中出现了故障，会立即停机，需要马上处理。机器结构了解——正面.TowaAutoMoldTraining机器结构了解——背面CULLBOX——用来装切下来的料饼；OUTMG——用来装封装好的L/F；配电柜——用来安装整个模机的电源和PLC，以及伺服电机的SERVOPACK。.TowaAutoMoldTraining模具介绍：型腔注塑孔胶道模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品，以免对模具表面产生损伤。严禁使用钨钢笔、cull等非铜材料硬质工具清洁模具。.塑封(Molding)2.Molding相关材料ACompound塑封胶BMoldChase塑封模具.塑封(Molding)3.Molding辅助设备AX-RAYX射线照射机BPlasma清洗机.Thanksforwatchingandlistening.感谢亲观看此幻灯片，此部分内容来源于网络，如有侵权请及时联系我们删除，谢谢配合！