Chapter02 Power Electronic Devices 《电力电子技术（第5版）》英文版本课件

PowerElectronicsChapter2PowerElectronicDevicesOutline2.1Anintroductoryoverviewofpowerelectronicdevices2.2Uncontrolleddevice—powerdiode2.3Half-controlleddevice—thyristor2.4Typicalfully-controlleddevices2.5Othernewpowerelectronicdevices2.6PowerintegratedcircuitsandintegratedpowerelectronicsmodulesTheconceptandfeaturesConfigurationofsystemsusingpowerelectronicdevicesClassificationsMajortopics2.1AnintroductoryoverviewofpowerelectronicdevicesPowerelectronicdevices:InbroadsenseVeryoften:Majormaterialusedinpowersemiconductordevices——Siliconaretheelectronicdevicesthatcanbedirectlyusedinthepowerprocessingcircuitstoconvertorcontrolelectricpower.TheconceptofpowerelectronicdevicespowerelectronicdevicesVacuumdevices:Mercuryarcrectifierthyratron,etc..seldominusetodaySemiconductordevices:majorpowerelectronicdevicessincelate1950sPowerelectronicdevices=PowersemiconductordevicesFeaturesofpowerelectronicdevicesTheelectricpowerthatpowerelectronicdevicedealswithisusuallymuchlargerthanthattheinformationelectronicdevicedoes.Usuallyworkinginswitchingstatestoreducepowerlossesp=vi=0Off-stateCurrentthroughthedeviceis0i=0p=vi=0On-stateVoltageacrossthedeviceis0v=0FeaturesofpowerelectronicdevicesNeedtobecontrolledbyinformationelectroniccircuits.Veryoften,drivecircuitsarenecessarytointerfacebetweeninformationcircuitsandpowercircuits.Dissipatedpowerlossusuallylargerthaninformationelectronicdevices—specialpackagingandheatsinkarenecessary.Powerlossesonpowersemiconductordevices=conductionloss+turn-offloss+off-stateloss+turn-onlossTotalpowerlossonapowersemiconductordeviceSwitchingloss(on-stateloss)(usuallyverysmallandcanbeneglected)ConfigurationofsystemsusingpowerelectronicdevicesControlcircuitDetection(measurement)circuitdrivecircuitPowercircuit(powerstage,maincircuit)Controlcircuit(inabroadsense)Powerelectronicsystem:Electricisolation:opticalormagneticProtectioncircuitisalsoveryoftenusedinpowerelectronicsystemespeciallyfortheexpensivepowersemiconductors.TerminalsofapowerelectronicdeviceApowerelectronicdevicemusthaveatleasttwoterminalsallowingpowercircuitcurrentflowthrough.Apowerelectronicdeviceusuallyhasathirdterminal——controlterminaltocontrolthestatesofthedevice.Thecontrolsignalfromdrivecircuitmustbeconnectedbetweenthecontrolterminalandafixedpowercircuitterminal(thereforecalledcommonterminal).DriveCircuitAclassificationofpowerelectronicdevicesUncontrolleddevice:diode(Uncontrollabledevice)Fully-controlleddevice:PowerMOSFET,IGBT,GTO,IGCT(Fully-controllabledevice)Half-controlleddevice:thyristor(Half-controllabledevice)hasonlytwoterminalsandcannotbecontrolledbycontrolsignal.Theonandoffstatesofthedevicearedeterminedbythepowercircuit.isturned-onbyacontrolsignalandturned-offbythepowercircuitTheonandoffstatesofthedevicearecontrolledbycontrolsignals.OtherclassificationspowerelectronicdevicesPulse-triggereddevicesLevel-sensitive(level-triggered)devicespowerelectronicdevicespowerelectronicdevicesCurrent-driven(current-controlled)devicesVoltage-driven(voltage-controlled)devices(Field-controlleddevices)Unipolardevices(Majoritycarrierdevices)CompositedevicesBipolardevices(Minoritycarrierdevices)Appearance,structure,andsymbolPhysicsofoperationCharacteristicsSpecificationSpecialissuesDevicesofthesamefamilyMajortopicsforeachdeviceSwitchingcharacteristics(Dynamiccharacteristics)StaticcharacteristicsPassivecomponentsinpowerelectroniccircuitTransformer,inductor,capacitorandresistorThesearecalledpassivecomponentsinapowerelectroniccircuitsincetheycannotbecontrolledbycontrolsignalandtheircharacteristicsareusuallyconstantandlinear.Therequirementsforthesepassivecomponentsbypowerelectroniccircuitscouldbeverydifferentfromthosebyordinarycircuits.2.2Uncontrolleddevice—PowerdiodeAppearanceStructureSymbolCathodeAnodeKAAnodeCathodePNjunctionSpacechargeregion(depletionregion,potentialbarrierregion)Semiconductor(ColumnIVelement,Si)ElectronsandholesPuresemiconductor(intrinsicsemiconductor)Doping,P-typesemiconductor.N-typesemiconductorPNjunctionEquilibriumofdiffusionanddriftPNjunctionwithvoltageappliedintheforwarddirectionPNjunctionwithvoltageappliedinthereversedirectionConstructionofapracticalpowerdiodeFeaturesdifferentfromlow-power(informationelectronic)diodes–Largersize–Verticallyorientedstructure–ndriftregion(p-i-ndiode)–Conductivitymodulation250μmBreakdownvoltagedependent10μm-Forward-biasedpowerdiodeReverse-biasedpowerdiodeBreakdown–Avalanchebreakdown–ThermalbreakdownThepositiveandnegativechargeinthedepletionregionisvariablewiththechangingofexternalvoltage.—–JunctioncapacitorCJ.JunctioncapacitorCJJunctioncapacitorinfluencestheswitchingcharacteristicsofpowerdiode.JunctioncapacitorDiffusioncapacitorCDPotentialbarriercapacitorCBStaticcharacteristicsofpowerdiodeTheI-VcharacteristicsofpowerdiodeSwitching(dynamic)characteristicsofpowerdiodeReverse-recoveryprocess:Reverse-recoverytime,reverse-recoverycharge,reverse-recoverypeakcurrent.Turn-offtransientSwitching(dynamic)characteristicsofpowerdiodeForwardrecoveryprocess:forward-recoverytimeTurn-ontransientSpecificationsofpowerdiodeAveragerectifiedforwardcurrentIF(AV)ForwardvoltageUFPeakrepetitivereversevoltageURRMMaximumjunctiontemperatureTJMReverse-recoverytimetrrTypesofpowerdiodesGeneralpurposediode(rectifierdiode):FastrecoverydiodeSchottkydiode(Schottkybarrierdiode-SBD)standardrecoveryReverserecoverytimeandchargespecified.trrisusuallylessthan1μs,formanylessthan100ns——ultra-fastrecoverydiode.–Amajoritycarrierdevice–Essentiallynorecoveredcharge,andlowerforwardvoltage.–Restrictedtolowreversevoltageandblockingcapability(lessthan200V)ExamplesofcommercialpowerdiodesHistoryandapplicationsofpowerdiodeAppliedinindustriesstarting1950sStillin-usetoday.UsuallyworkingwithcontrolleddevicesasnecessarycomponentsInmanycircumstancesfastrecoverydiodesorschottkydiodeshavetobeusedinsteadofgeneralpurposediodes.2.3Half-controlleddevice—ThyristorAnothername:SCR—siliconcontrolledrectifierThyristorOpenedthepowerelectronicsera1956,invention,BellLaboratories1957,developmentofthe1stproduct,GE1958,1stcommercializedproduct,GEThyristorreplacedvacuumdevicesinalmosteverypowerprocessingarea.Stillinuseinveryhighpowersituation.Thyristorstillhasthehighestpower-handlingcapability.HistoryAppearanceandsymbolofthyristorSymbolAppearanceCathodeAnodeGateStructureandequivalentcircuitofthyristorStructureEquivalentcircuitPhysicsofthyristoroperationEquivalentcircuit:Apnptransistorandannpntransistorinterconnectedtogether.PositivefeedbackTriggerCannotbeturnedoffbycontrolsignalHalf-controllableQuantitativedescriptionofthyristoroperationIc1=1IA+ICBO1（2-1）Ic2=2IK+ICBO2（2-2）IK=IA+IG（2-3）IA=Ic1+Ic2（2-4）（2-5）WhenIG=0,a1+a2issmall.WhenIG>0,a1+a2willapproach1,andIAwillbeverylarge.OthermethodstotriggerthyristorHighvoltageacrossanodeandcathode—avalanchebreakdownHighrisingrateofanodevoltage—du/dttoohighHighjunctiontemperatureLightactivationStaticcharacteristicsofthyristorBlockingwhenreversebiased,nomatterifthereisgatecurrentappliedConductingonlywhenforwardbiasedandthereistriggeringcurrentappliedtothegateOncetriggeredon,willbelatchedonconductingevenwhenthegatecurrentisnolongerappliedTurningoff:decreasingcurrenttobenearzerowiththeeffectofexternalpowercircuitGateI-VcharacteristicsOUAkIAIHIG2IG1IG=0UboUDSMUDRMURRMURSMforwardconductingavalanchebreakdownreverseblockingincreasingIGforwardblockingSwitchingcharacteristicsofthyristorTurn-ontransientDelaytimetdRisetimetrTurn-ontimetgtTurn-offtransientReverserecoverytimetrrForwardrecoverytimetgrTurn-offtimetqSpecificationsofthyristorPeakrepetitiveforwardblockingvoltageUDRMPeakrepetitivereverseblockingvoltageURRMPeakon-statevoltageUTMAverageon-statecurrentIT(AV)HoldingcurrentIHLatchingupcurrentILPeakforwardsurgecurrentITSMdu/dtdi/dtThefamilyofthyristorsFastswitchingthyristor—FSTTriodeACswitch—TRIAC(Bi-directionaltriodethyristor)Reverse-conductingthyristorLight-triggered(activited)thyristor—RCT—LTT2.4Typicalfully-controlleddevices2.4.1Gate-turn-offthyristor—GTO2.4.2Gianttransistor—GTR2.4.3Powermetal-oxide-semiconductorfieldeffecttransistor—PowerMOSFET2.4.4Insulated-gatebipolartransistor—IGBTFeaturesBegintobeusedinlargeamountin1980sGTRisobsoleteandGTOisalsoseldomusedtoday.IGBTandpowerMOSFETarethetwomajorpowersemiconductordevicesnowadays.ApplicationsICfabricationtechnology,fully-controllable,highfrequencyAGKGGKN1P1N2N2P2b)a)2.4.1Gate-turn-offthyristor—GTOMajordifferencefromconventionalthyristor:Thegateandcathodestructuresarehighlyintegrated,withvarioustypesofgeometricformsbeingusedtolayoutthegatesandcathodes.StructureSymbolPhysicsofGTOoperationThebasicoperationofGTOisthesameasthatoftheconventionalthyristor.Theprincipaldifferenceslieinthemodificationsinthestructuretoachievegateturn-offcapability.Largea2a1+a2isjustalittlelargerthanthecriticalvalue1.Shortdistancefromgatetocathodemakesitpossibletodrivecurrentoutofgate.CharacteristicsofGTOStaticcharacteristicsIdenticaltoconventionalthyristorintheforwarddirectionRatherlowreversebreakdownvoltage(20-30V)SwitchingcharacteristicsSpecificationsofGTOMostGTOspecificationshavethesamemeaningsasthoseofconventionalthyristor.Specificationsdifferentfromthyristor’sMaximumcontrollableanodecurrentIATOCurrentturn-offgainβoffTurn-ontimetonTurn-offtimetoff2.4.2GiantTransistor—GTRGTRisactuallythebipolarjunctiontransistorthatcanhandlehighvoltageandlargecurrent.SoGTRisalsocalledpowerBJT,orjustBJT.BasicstructureSymbolStructureofGTR——differentfromitsinformation-processingcounterpartMultiple-emitterstructureDarlingtonconfigurationPhysicsofGTRoperationSameasinformationBJTdeviceStaticcharacteristicsofGTRcut-offregionAmplifying(active)regionOIib3ib2ib1ib1>1800Sublime>>180012381415Meltingtemperature()11001240873460300Maximumoperatingtemperature(K)220037072090030090035085001350Electronmobilityat300K()102.42.01.2123.31.30.40.3Breakdownelectricfield()5.510.310.39.68.59.511.112.811.8Relativedielectricconstant5.453.13.262.366.283.442.261.431.12Bandgapat300K(eV)Diamond6H-SiC4H-SiC3C-SiCAIN2H-GaNGaPGaAsSiPhysicalPropertiesofSiliconCarbideWaferProductionInfineonSiCoverviewUnipolardevicesExistingproducts:¬Diodebased:300V…1200V(1700Vcanberealizedondemand)Underdevelopment:¬JFETbased:600V…1500V(discrete,cascodesinmodules)¬Expansiontohighervoltageclasses(singlechip/super-cascode)possibleBipolardevicesNodevelopmentactivitiesatIFXSolidvolumeforecastsandcosttargetsrequiredGaNanddiamondGaNhasmuchmorepotentialthanSiCtoachievehigherswitchingfrequency.ManufacturingofsinglecrystalGaNmaterialisstillunsolved.ButfabricationtechniquesofGaNdevicesbasedonsubstratesofothercrystalmaterialhavemajorbreakenoughinrecentyears.CommercializedGaNSBDhasbeenavailablesince2007andGaNMOSFEThasbeenreportedfrequentlybyrecenttechnicalpapers.Diamondisthematerialwiththegreatestpotentialforpowerdevices.ThestateofdiamonddevicetechnologyisprimitivecomparedtothatofSiCandGaN.Themethodoffabricatingsinglecrystalwaferandthetechniquefordoingselectivediffusionofimpuritiesandselectiveetchingarestillmajorobstacles.2.6PowerintegratedcircuitandpowermoduleIntegrationofpowerelectronicdevicesMonolithicintegration:powerintegratedcircuitPackagingintegration:powermoduleSmartpowerintegratedcircuit(SmartpowerIC,SPIC,Smartswitch)Highvoltageintegratedcircuit(HVIC)Ordinarypowermodule:justpowerdevicespackagedtogetherIntegratedpowerelectronicsModule(IPEM):powerdevices,drivecircuit,protectioncircuit,controlcircuitIntelligentpowermodule(IPM):powerdevices,drivecircuit,protectioncircuit(Lateralhigh-voltagedevicesfabricatedwithconventionallogic-leveldevices)(Verticalpowerdevicesontowhichadditionalcomponentsareaddedwithoutchangingtheverticalpowerdevicesprocesssequence)Forahighpowerequipment,morethanonemodulemaybeneeded,inwhichcasethemodulesarealsocalledPowerelectronicsbuildingblocks(PEBB)ThreemajorchallengestointegrationElectricalisolationofhigh-voltagecomponentsfromlow-voltagecomponentsThermalmanagement—powerdevicesusuallyathighertemperaturesthanlow-voltagedevicesElectro-magneticinterference(EMI)ofpowercircuittoinformationcircuitReviewofdeviceclassificationspowerelectronicdevicesPulse-triggereddevices:thyristor,GTOLevel-sensitive(Level-triggered)devices:GTR,powerMOSFET,IGBT,SIT,SITH,MCT,IGCTpowerelectronicdevicespowerelectronicdevicesCurrent-driven(current-controlled)devices:thyristor,GTO,GTRVoltage-driven(voltage-controlled)devices(Field-controlleddevices):powerMOSFET,IGBT,SIT,SITH,MCT,IGCTUni-polardevices(Majoritycarrierdevices):SBD,powerMOSFET,SITCompositedevices:IGBT,SITH,MCTBipolardevices(Minoritycarrierdevices):ordinarypowerdiode,thyristor,GTO,GTR,IGCT,IGBT,SITH,MCTComparisonofthemajortypesofdevicesPower-handlingcapabilityComparisonofthemajortypesofdevicesMaximumallowedcurrentdensityasafunctionoftheswitchingfrequencyResistancedistributionofMOSFETRoadmapofHVMOSFETSuperJunctionTheoremDonorandacceptorspacechargescanceleachotherout!TrenchtechnologyPackagecontributiontoRds(on)forBest-in-ClassLVMOSFETdevicesPackagedevelopmentVerticalIGBTconceptsSummaryofmajordevicesPowerMOSFET(forpowerlevellessthan10KW)IGBT(forpowerlevelfromseveralKWupto10MW)Thyristor(forpowerlevelhigherthan10MW)Devicesbasedonwideband-gapmaterialsareverypromising