Silicon-based reproducible and active surface-enhanced Raman scattering
substrates for sensitive, specific, and multiplex DNA detection
Z. Y. Jiang, X. X. Jiang, S. Su, X. P. Wei, S. T. Lee et al.
Citation: Appl. Phys. Lett. 100, 203104 (2012); doi: 10.1063/1.3701731
View online: http://dx.doi.org/10.1063/1.3701731
View Table of Contents: http://apl.aip.org/resource/1/APPLAB/v100/i20
Published by the American Institute of Physics.
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Silicon-based reproducible and active surface-enhanced Raman scattering
substrates for sensitive, specific, and multiplex DNA detection
Z. Y. Jiang,1 X. X. Jiang,1 S. Su,1 X. P. Wei,1 S. T. Lee,2 and Y. He1,a)
1Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano
& Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
2Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR,
China and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR,
China
(Received 29 February 2012; accepted 16 March 2012; published online 14 May 2012)
Silicon-based active and reproducible surface-enhanced Raman scattering (SERS) substrate, i.e., silver
nanoparticles decorated-silicon wafers (AgNPs@Si), is employed for constructing high-performance
sensors. Significantly, the AgNPs@Si, facilely prepared via in situ AgNPs growth on silicon wafers,
features excellent SERS reproducibility and high enhancement factor. Our experiment further
demonstrates such resultant silicon-based SERS substrate is efficacious for multiplex, sensitive, and
specific DNA detection. In particular, single-base mismatched DNA with low concentrations is readily
discriminated by using the AgNPs@Si. Moreover, the silicon-based sensor exhibits adequate
multiplexing capacity, enabling unambiguous identification of the dual-target DNA detection. VC 2012
American Institute of Physics. [http://dx.doi.org/10.1063/1.3701731]
Surface-enhanced Raman scattering (SERS) is one of
the most powerful analytical tools for myriad sensing appli-
cations due to its unique merits.1–6 For examples, compared
with normal Raman signals, the SERS signals are ideally
amplified 1012–1015 times when target molecules reside in
the proper gap between neighboring metal nanoparticles (so
called “hot spots”), allowing the acquisition of the character-
istic fingerprint of low-concentration analytes. Moreover,
SERS features narrow Raman bands that lead to minimal
background and tremendous multiplexing capabilities. As a
result, SERS has been widely utilized for wide-ranging sens-
ing applications.3–6 To enable SERS techniques for practical
applications, SERS substrates need to be reproducible,
highly sensitive, and facilely fabricated. While solution-
phase metal (e.g., silver and gold) nanoparticles employed in
most ever reported multi-assay studies are well-studied, they
are prone to be uncontrollably and randomly aggregated in a
solution phase, yielding relatively unstable and irreproduci-
ble SERS signals.7 Much effort has been devoted to improve
the SERS reproducibility. Of particular note, silicon nano-
structures have drawn increasingly attentions and employed
for SERS applications due to many attractive properties
including excellent electronic/mechanical properties,
favorable biocompatibility, surface tailorability, improved
multifunctoinality, as well as their compatibility with con-
ventional silicon technology. Particularly, silicon nanowires
(SiNWs) decorated with metal nanoparticles (e.g., AuNPs
and AgNPs) have been recently developed as high-
performance SERS platform with excellent reproducibility,
since the metal nanoparticles are tightly immobilized by the
SiNWs, effectively preventing random aggregation of the
nanoparticles.8–14 As a result, such SiNWs-based SERS sub-
strates have been further utilized for wide-ranging sensing
applications. For instance, the gold nanoparitcle-coated
SiNWs were used for multiplexed DNA detection with a
detection limit of 10 pM.14 These exciting results demon-
strate silicon as a promising candidate for SERS applica-
tions. Nevertheless, it is worthwhile to point out that most
silicon-based SERS substrates are made of SiNWs, involving
relatively complicated synthetic procedures and post-
treatment (e.g., metal-catalyzed vapor-liquid-solid, oxide-
assisted, and HF-assisted etching growth, etc.).9
On the other hand, multiplex, sensitive, and specific DNA
detection is of great demand for various chemical and biologi-
cal studies.15,16 Radioactivity and fluorescence are the most
established techniques for DNA detection. However, the issue
of safety has been a priority concern of the radioactivity
method, severely limiting its wide applications. While fluores-
cence methods are capable for facile and sensitive DNA detec-
tion, multiplexing detection is greatly limited due to the broad
emission profiles (�50–100 nm full width at half-maximum
(FWHM)) of conventional fluorophores (e.g., organic
dyes).17,18 II-VI semiconductor quantum dots (QDs), serving
as novel fluorescent labels with narrow spectral band (�25–40
nm fwhm), have been recently utilized for various biosensing
applications.19,20 Notwithstanding, potential toxicity problems
resulting from heavy metal ions (e.g., Cd ions) in the QDs
have not been satisfactorily resolved and remain to be a critical
issue.21,22 Therefore, it is desirable to develop new strategies
for sensitive, specific, and multiplex detection of DNA.
In this communication, we present a kind of silicon-
based SERS-active and reproducible substrate, i.e., silver
nanoparticles decorated-silicon wafers (AgNPs@Si), which is
capable of facile, sensitive, and multiplex detection of DNA.
AgNPs are directly in situ growth on surface of silicon wafers,
producing the AgNPs@Si in very short time (�90 s). Signifi-
cantly, the AgNPs@Si features excellent SERS reproducibil-
ity and high enhancement factor. Our experiment further
demonstrates such resultant silicon-based SERS substrate is
efficacious for multiplexed DNA detection with high sensitiv-
ity and specificity.
a)Authors to whom correspondence should be addressed. Electronic
addresses: apannale@cityu.edu.hk and yaohe@suda.edu.cn.
0003-6951/2012/100(20)/203104/4/$30.00 VC 2012 American Institute of Physics100, 203104-1
APPLIED PHYSICS LETTERS 100, 203104 (2012)
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The AgNPs@Si is facilely synthesized via in situ growth
of AgNPs on silicon wafers by an established HF-etching
assisted chemical reduction method, i.e., Ag ions are reduced
by Si-H bonds covered on surface of H-terminated silicon
wafers (see experiment details in supporting informa-
tion).9,10,26 Briefly, the cleaned silicon wafer was immersed
in hydrogen fluoride (HF, 5%) solution for 30 min to achieve
H-terminated silicon wafer. The silicon wafer covered by Si-
H bonds was then immediately placed into a freshly prepared
reduction solution containing silver nitrate (AgNO3) with
slowly stirring for 90 s, achieving the AgNPs@Si. Scanning
electronic microscopy (SEM) and atomic force microscopy
(AFM) images of the prepared AgNPs@Si show that around
60 AgNPs with average size of �106 nm are uniformly dis-
tributed on surface of silicon wafers (1 lm length� 1 lm
width) (Figures 1(a) and 1(b), also see size distribution in
Figure S1). Previous reports reveal that the hot spots—the
gap region between a pair of AgNPs—are strongly coupled
and inter-connected by the semiconducting silicon sub-
strates. As a result, the AgNPs@Si yields a higher enhanced
factor (EF: 8.8� 106) value compared to that of free
AgNPs.8–14,23 More significantly, the AgNPs@Si possess
excellent reproducibility. A large area (10 lm length� 10 lm
width) AgNPs@Si dispersed with 1� 10�6 M R6G is
selected for mapping test to interrogate the reproducibility of
the AgNPs@Si substrate. Significantly, uniform SERS spectra
recorded from 40 random spots on the substrate are observed
(Figure 1(c)). Moreover, Figure 1(d) presents the correspond-
ing SERS intensities of the 1517 cm�1 peak (one typical
Raman peak of R6G molecules5), showing similar intensity
values (�261006 3200) with relatively small standard devia-
tion (12.4%). We reason that AgNPs are tightly immobilized
on silicon wafers, which effectively prevents random aggre-
gation of AgNPs, leading to excellent SERS reproducibility
of the AgNPs@Si.7–12
To explore their utility as SERS-based DNA sensing
platform, a “sandwich-type” DNA structure is further fabri-
cated by using the AgNPs@Si based on established protocol
(Figure 2).10,23 In brief, the AgNPs@Si is first functionalized
with the thiolated single-strand capture DNA (step 1), fol-
lowed by sequentially incubated with the target DNA and
the reporter DNA tagged with Rhodamine 6G (R6G, one
kind of commercial organic dyes, step 2). Consequently, the
capture probe and the reporter probe flank the target DNA at
different region, producing the sandwiched structure of cap-
ture/target/reporter DNA ready for SERS detection (step 3).
As a control, a single-stranded, non-cognated DNA
(DNANC) that is not complementary to the capture DNA is
also employed (step 20 and 30). Note that, to avoid high laser
power-induced DNA damage, D2 filter is selected in our
experiment, i.e., the excitation laser power (0.2 mW) equals
to 1% of the original laser power (20 mW) equipped in the
Raman instrument.
Quantitative evaluation of the AgNPs@Si-based SERS
sensor was determined by monitoring the Raman band inten-
sity of R6G, covalently attached to the reporter DNA. Our
analysis is based on the change of signal intensity of the
prominent 1517 cm�1 Raman peak (assigned to the stretch-
ing vibration of C-C bond ring mode of R6G (Refs. 24 and
25)). Figure 3(a) shows the corresponding diagnostic peaks
of DNA with serial concentrations. The Raman intensity is
gradually reduced along with DNA concentrations decreas-
ing from 10 nM to 1 pM. Figure 3(b) shows that the Raman
peak intensity initially drops approximately to 61%, 43%,
21%, or 13% of the original intensity, when the DNA con-
centration is reduced to 1, 0.1, 0.01, or 0.001 nM, respec-
tively. Nevertheless, the Raman intensity of 1 pM DNA
(�1300) is distinctly larger than that (�30) of background,
i.e., AgNP@Si without DNA modification, demonstrating
high sensitivity of the AgNP@Si-based DNA sensor. To
evaluate specificity of the sensor, DNANC with serial con-
centrations from 10 nM to 1 pM is detected as controls. Only
feeble Raman signals of R6G close to the background are
observed under the same experiment conditions (blue col-
umns in Figure 3(b)). The reason is that capture DNA strands
are sufficiently assembled on surface of AgNPs in advance,
greatly suppressing nonspecific absorbance of R6G to
AgNPs.8–10 Furthermore, single-based mismatches could be
discriminated due to high specificity of the prepared
AgNPs@Si. Raman intensity (�1300) of the fully comple-
mentary DNA is much stronger than that (�300) of the
single-base mismatched targets at the same concentration
FIG. 1. SEM (a) and AFM (b) images of the prepared AgNPs@Si. The
AFM image is collected from a 5.0� 5.0 lm2. Raman mapping spectra (c)
and corresponding Raman intensity (d) of R6G dispersed on surface of the
AgNPs@Si. (kexcitation¼ 633 nm, acquisition time¼ 1 s, laser power¼ 20
mW, hole¼ 1000, slit¼ 100, grating¼ 600, and filter¼D2).
FIG. 2. Schematic representation for constructing the silicon-based SERS
sensor and its use for DNA detection.
203104-2 Jiang et al. Appl. Phys. Lett. 100, 203104 (2012)
Downloaded 11 Oct 2012 to 219.242.96.27. Redistribution subject to AIP license or copyright; see http://apl.aip.org/about/rights_and_permissions
(1 pM, Figure 3(c)). Uniform Raman spectra recorded from
25 random points on the DNA-functionalized substrates
(Figure 3(d)), as well as the corresponding SERS intensities
of the 1517 cm�1 peak (Figure S2) with relatively small
standard deviation (13.1%), clearly suggest that the
AgNPs@Si preserves stable and excellent reproducibility af-
ter the DNA assembly. Moreover, small error bar obtained
from at least three independent experiments in Figures 3(b)
and 3(c) provides additional demonstration of the good
reproducibility of the AgNPs@Si for DNA detection.
Simultaneous detection of multiple analysts in a mixture
without separation is a crucial requirement for the develop-
ment of more effective and simpler molecular detection
assays.5,9,10,14 Significantly, the AgNPs@Si allows simulta-
neous anchoring of different DNA probes at the surface of
AgNPs via Ag-S bonds due to its high surface-to-volume ra-
tio, thus providing an opportunity for multiplexed DNA
detection. In our experiment, multi-detection of specific
DNA sequences through the selective capture of target
strands is performed as described in Figure 4(a). Typically,
two types of thiol-modified capture sequences (Pa and Pb)
are mixed at equal molar ratio and co-assembled at the sur-
face of AgNPs@Si (step 1). Different organic dyes (e.g.,
R6G and Cy3)-tagged reporter DNA strands (Ra and Rb) are
employed for specifically recognizing corresponding target
DNA (Ta and Tb). In absence of target DNA, only feeble
background signals are observed. If one certain target DNA
is added, the action of hybridization to the target sequences
would lead to tremendous amplification of the Raman signals
via the SERS effect (step 2a or 2b). As a result, the Raman
spectra of the single-target DNA detection exhibits strong
SERS signals of representative Raman peaks of R6G (a blue
line, Fig. 4(b)) or Cy3 (a red line, Fig. 4(b)), respectively,
with minimal spectral overlapping. Furthermore, in the case
of detection of a mixture of two targets DNA, both Cy3- and
R6G-tagged probes DNA are simultaneously hybridized
with their corresponding targets (steps 2a and 2b), producing
characteristic Raman bands of R6G and Cy3, as presented in
Fig. 4(b) (black line). These results also suggest that differ-
ent capture DNA assembled on the AgNPs@Si does not
interfere with the specificity of the detections.
To be summarized, in this study, we report AgNPs@Si
as high-performance silicon-based SERS substrates for sen-
sitive, specific, and multiplex DNA detection. The
AgNPs@Si, facilely prepared via in situ AgNPs growth on
silicon wafers, features excellent reproducibility and high
enhancement factor. Significantly, systematic comparison of
SERS spectra demonstrates that this new silicon-based SERS
biosensor is highly sensitive and specific for DNA detection.
Single-base mismatched DNA with a low concentration
down to 1 pM is readily discriminated by using the
AgNPs@Si. Moreover, the silicon-based sensor exhibits
adequate multiplexing capacity, enabling unambiguous iden-
tification of the dual-target DNA detection. Given that com-
mercial silicon wafers are conveniently obtained, the high-
performance silicon-based SERS sensor may serve as a
potentially practical and versatile tool for myriad sensing
applications.
The authors would like to thank National Basic
Research Program of China (973 Program 2012CB932400),
NSFC (30900338, 51072116, 51132006), Research Grants
Council of Hong Kong SAR, - Grant No. CityU101909,
012CB932400), and a project funded by the Priority
FIG. 3. (a) SERS spectra of target DNA with different concentrations
obtained from the silicon-based sensor. (b) DNA is quantitatively detected
by measuring the SERS signals of R6G attached to DNA. Raman signals of
DNANC and background are presented as control. (c) Detection of single-
based mismatches. Raman intensity is challenged with 1 pM DNA target,
mutated to either A, G, or C. (d) SERS spectra recorded from 25 random
points on the substrates assembled with 10 pM target DNA. (kexcitation¼ 633
nm, laser power¼ 20 mW, acquisition time¼ 1 s, hole¼ 1000, slit¼ 100,
grating¼ 600, and filter¼D2).
FIG. 4. A scheme for the design of the mixed DNA-functionalized
AgNPs@Si (a) and the corresponding SERS spectra for multiplex detection
of target DNA (1 pM) (b). (kexcitation¼ 633 nm, laser power¼ 20 mW, acqui-
sition time¼ 1 s, hole¼ 1000, slit¼ 100, grating¼ 600, and filter¼D2).
203104-3 Jiang et al. Appl. Phys. Lett. 100, 203104 (2012)
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