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Mixed solvent systems for deposition of organic semiconductors. Clough, Robert S.; Redinger, David H.; Novack, James C. PCT Int. Appl. WO 2009151978 A1 17 Dec 2009, 73pp. DESIGNATED STATES: W: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IS, IT, LU, MC, ML, MR, MT, NE, NL, NO, PT, SE, SN, TD, TG, TR. (English). (World Intellectual Property Organization). CODEN: PIXXD2. APPLICATION: WO 2009-US45571 29 May 2009. PRIORITY: US 2008-60595P 11 Jun 2008. English2009PCT Int. Appl.WO 2009151978World Intellectual Property OrganizationWO 2009-US4557129 May 2009US 2008-60595P 11 Jun 2008 3M Innovative Properties CompanyUSA Patent WO 2009-US45571 76 (Electric Phenomena)22; 38; 48; 68 152:88041 Compns. that contain an org. semiconductor dissolved in a solvent mixt. are described which can be used to efficiently and completely deposit org. semiconductor films to give devices with high performance characteristics. More specifically, the solvent mixt. includes an alkane having 9-16 C atoms in an amt. equal to 1-20 wt.% and an arom. compd. in an amt. equal to 80-99 wt.%. The semiconductor material is dissolved in the solvent mixt. in an amt. equal to at least 0.1 wt.% based on a total wt. of the compn. Methods of making a semiconductor device using the compns. to form a semiconductor layer are also described. mixed solvent system deposition org semiconductor Alkanes, C9-C16; mixed solvent systems for deposition of org. semiconductors; Coating process, dip; mixed solvent systems for deposition of org. semiconductors; Coating process, Dissolution, Evaporation, Ink-jet printing, Nanocomposites, Nanoparticles, Semiconductor device fabrication, Semiconductor films, Solutions, Solvents, Thin film transistors, Aromatic hydrocarbons, Organic compounds, Polymers, mixed solvent systems for deposition of org. semiconductors; Solvents, org.; mixed solvent systems for deposition of org. semiconductors; Polymerization, photopolymn., UV; mixed solvent systems for deposition of org. semiconductors; Coating process, spin; mixed solvent systems for deposition of org. semiconductors; 2530-85-0, Silquest A174; mixed solvent systems for deposition of org. semiconductors; 67-56-1, processes, 75-09-2, processes, 78-59-1, 78-93-3, processes, 91-16-7, 98-06-6, 98-82-8, 100-84-5, 103-65-1, 104-51-8, 104-93-8, 107-98-2, 108-67-8, processes, 109-99-9, processes, 112-40-3, 119-64-2, 124-18-5, 135-98-8, 538-93-2, 578-58-5, 592-57-4, derivs., 623-12-1, 766-51-8, 874-63-5, 1004-66-6, 1120-21-4, 1706-11-2, 2845-89-8, 2944-49-2, 4685-47-6, 6738-23-4, 9003-53-6, 25155-15-1, 1201561-46-7, 1201561-48-9, 1201561-50-3, 557-93-7, 947-19-3, 1066-54-2, 3029-32-1, 7751-38-4, 40220-08-4, 373596-08-8, 1194303-86-0, 1194308-82-1, 1194310-06-9, 1194306-01-8, 1201561-44-5, 373596-08-8, derivs., 427879-51-4, derivs., 1194303-86-0, derivs., 1194304-38-5, 1194306-01-8, derivs., 1194308-82-1, derivs., 1194310-06-9, derivs., 1194322-47-8, derivs., mixed solvent systems for deposition of org. semiconductors; 1314-23-4, processes, nanoparticles; mixed solvent systems for deposition of org. semiconductors