1
TM
File Number 4824.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2001
HS-508BRH
Radiation Hardened 8 Channel CMOS
Analog Multiplexer with Overvoltage
Protection
The HS-508BRH is a dielectrically isolated, radiation
hardened, CMOS analog multiplexer incorporating an
important feature; it withstands analog input voltages much
greater than the supplies. This is essential in any system
where the analog inputs originate outside the equipment.
They can withstand a continuous input up to 10V greater than
either supply, which eliminates the possibility of damage when
supplies are off, but input signals are present. Equally
important, it can withstand brief input transient spikes of
several hundred volts; which otherwise would require complex
external protection networks. Necessarily, ON resistance is
somewhat higher than similar unprotected devices, but very
low leakage current combine to produce low errors.
Reference Application Notes 520 and 521 for further
information on the HS-508BRH multiplexer in general.
The HS-508BRH has been specifically designed to meet
exposure to radiation environments. Operation from -55oC to
125oC is guaranteed.
Features
• Electrically Screened to SMD # 5962-96742
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105 Rad (Si)
- Dielectrically Isolated Device Islands
- SEP >100 Mev-mg/cm2
• Analog/Digital Overvoltage Protection
• ESD Rated to 3kV
• Fail Safe with Power Loss (No Latchup)
• Break-Before-Make Switching
• DTL/TTL and CMOS Compatible
• Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V
• Fast Access Time
• Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ)
• Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ)
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96742. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Pinouts
HS1-508BRH 16 LEAD SIDEBRAZE DIP
MIL-STD-1835, CDIP2-T16
TOP VIEW
HS9-508BRH 16 LEAD FLATPACK
MIL-STD-1835, CDFP4-F16
TOP VIEW
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP.
RANGE (oC)
5962F9674202QEC HS1-508BRH-8 -55 to 125
5962F9674202QXC HS9-508BRH-8 -55 to 125
5962F9674202VEC HS1-508BRH-Q -55 to 125
5962F9674202VXC HS9-508BRH-Q -55 to 125
HS1-508BRH/PROTO HS1-508BRH/PROTO -55 to 125
HS9-508BRH/PROTO HS9-508BRH/PROTO -55 to 125
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
AO
EN
-VSUP
IN 1
IN 2
IN 3
OUT
IN 4
A1
GND
+VSUP
IN 5
IN 6
IN 7
IN 8
A2 2
3
4
5
6
7
8
1 16
15
14
13
12
11
10
9
EN
IN1
IN2
IN3
IN4
OUT
GND
IN5
IN6
IN7
IN8
A0 A1
A2
+VSUP
-VSUP
Data Sheet January 2001
2
Functional Diagram
NPEN
IN 1
OUT
IN 8
DIGITAL
ADDRESS
DECODERSADDRESS INPUT
BUFFER AND
LEVEL SHIFTER
MULTIPLEX
SWITCHES
1
8
A0
A1
A2
NP
TRUTH TABLE
A2 A1 A0 EN “ON” CHANNEL
X X X L NONE
L L L H 1
L L H H 2
L H L H 3
L H H H 4
H L L H 5
H L H H 6
H H L H 7
H H H H 8
HS-508BRH
3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil Ltd.
8F-2, 96, Sec. 1, Chien-kuo North,
Taipei, Taiwan 104
Republic of China
TEL: 886-2-2515-8508
FAX: 886-2-2515-8369
Die Characteristics
DIE DIMENSIONS
120 mils x 93 mils x 19 mils
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8kÅ ±1kÅ
Top Metallization
Type: AlSiCu
Thickness: 16kÅ ±2kÅ
Substrate
Rad Hard Silicon Gate
Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
6.68e04 A/cm2
Transistor Count
506
Metallization Mask Layout
HS-508BRH
IN3
IN4
OUT
IN8
IN7
IN6
IN5 +V GND
EN
A0
A1
A2
IN2 IN1 -V
HS-508BRH