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HS1-508BRH斜杠PROTO

2011-01-04 3页 pdf 107KB 14阅读

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HS1-508BRH斜杠PROTO 1 TM File Number 4824.1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2001 HS...
HS1-508BRH斜杠PROTO
1 TM File Number 4824.1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2001 HS-508BRH Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection The HS-508BRH is a dielectrically isolated, radiation hardened, CMOS analog multiplexer incorporating an important feature; it withstands analog input voltages much greater than the supplies. This is essential in any system where the analog inputs originate outside the equipment. They can withstand a continuous input up to 10V greater than either supply, which eliminates the possibility of damage when supplies are off, but input signals are present. Equally important, it can withstand brief input transient spikes of several hundred volts; which otherwise would require complex external protection networks. Necessarily, ON resistance is somewhat higher than similar unprotected devices, but very low leakage current combine to produce low errors. Reference Application Notes 520 and 521 for further information on the HS-508BRH multiplexer in general. The HS-508BRH has been specifically designed to meet exposure to radiation environments. Operation from -55oC to 125oC is guaranteed. Features • Electrically Screened to SMD # 5962-96742 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105 Rad (Si) - Dielectrically Isolated Device Islands - SEP >100 Mev-mg/cm2 • Analog/Digital Overvoltage Protection • ESD Rated to 3kV • Fail Safe with Power Loss (No Latchup) • Break-Before-Make Switching • DTL/TTL and CMOS Compatible • Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V • Fast Access Time • Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ) • Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ) Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-96742. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/newsafclasst.asp Pinouts HS1-508BRH 16 LEAD SIDEBRAZE DIP MIL-STD-1835, CDIP2-T16 TOP VIEW HS9-508BRH 16 LEAD FLATPACK MIL-STD-1835, CDFP4-F16 TOP VIEW Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE (oC) 5962F9674202QEC HS1-508BRH-8 -55 to 125 5962F9674202QXC HS9-508BRH-8 -55 to 125 5962F9674202VEC HS1-508BRH-Q -55 to 125 5962F9674202VXC HS9-508BRH-Q -55 to 125 HS1-508BRH/PROTO HS1-508BRH/PROTO -55 to 125 HS9-508BRH/PROTO HS9-508BRH/PROTO -55 to 125 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 AO EN -VSUP IN 1 IN 2 IN 3 OUT IN 4 A1 GND +VSUP IN 5 IN 6 IN 7 IN 8 A2 2 3 4 5 6 7 8 1 16 15 14 13 12 11 10 9 EN IN1 IN2 IN3 IN4 OUT GND IN5 IN6 IN7 IN8 A0 A1 A2 +VSUP -VSUP Data Sheet January 2001 2 Functional Diagram NPEN IN 1 OUT IN 8 DIGITAL ADDRESS DECODERSADDRESS INPUT BUFFER AND LEVEL SHIFTER MULTIPLEX SWITCHES 1 8 A0 A1 A2 NP TRUTH TABLE A2 A1 A0 EN “ON” CHANNEL X X X L NONE L L L H 1 L L H H 2 L H L H 3 L H H H 4 H L L H 5 H L H H 6 H H L H 7 H H H H 8 HS-508BRH 3 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil Ltd. 8F-2, 96, Sec. 1, Chien-kuo North, Taipei, Taiwan 104 Republic of China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369 Die Characteristics DIE DIMENSIONS 120 mils x 93 mils x 19 mils INTERFACE MATERIALS Glassivation Type: Phosphorus Silicon Glass (PSG) Thickness: 8kÅ ±1kÅ Top Metallization Type: AlSiCu Thickness: 16kÅ ±2kÅ Substrate Rad Hard Silicon Gate Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density 6.68e04 A/cm2 Transistor Count 506 Metallization Mask Layout HS-508BRH IN3 IN4 OUT IN8 IN7 IN6 IN5 +V GND EN A0 A1 A2 IN2 IN1 -V HS-508BRH
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