HS1-201HSRH斜杠PROTO

1 TM File Number 4874 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 HS-201HSRH Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch The HS-201HSRH is a monolithic CMOS analog switch featuring power-off high input impedance, very fast switching speeds and low ON resistance. Fabrication on our DI RSG process assures SEL immunity and only very slight sensitivity to low dose rate (ELDRS). These Class V/Q devices are tested and guaranteed for 300krad (Si) total dose performance. Power-off high input impedance enables the use of this device in redundant circuits without causing data bus signal degradation. ESD protection, overvoltage protection, fast switching times, low ON resistance, and guaranteed radiation hardness, make the HS-201HSRH ideal for any space application where improved switching performance is required. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center (DSCC). The SMD numbers listed here must be used when ordering flight units. Detailed electrical specifications for this device are contained in SMD 5962-99618. A ”hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp Features • Electrically Screened to DSCC SMD 5962-99618 • QML Qualified per MIL-PRF-38535 • Radiation Performance - Guaranteed Total Dose Performance . . . . . 300krad (Si) - SEL Immune . . . . . . . . . . . . . . . . . . . . .DI RSG Process - Only Very Slightly Sensitive to Low Dose Rates (Vertical PNP and NPN device architectures) • Overvoltage Protection (Power On, Switch Off). . . . . . . ±30V • Power Off High Impedance . . . . . . . . . . . . . . . . . . . ±17V • Fast Switching Times - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110ns (Max) - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80ns (Max) • Low “ON” Resistance . . . . . . . . . . . . . . . . . . . 50Ω (Max) • Pin Compatible with Industry Standard 201 Types • Operating Supply Range . . . . . . . . . . . . . . . . . ±10V to ±15V • Wide Analog Voltage Range (±15V Supplies) . . . . . . . ±15V • TTL Compatible Applications • High Speed Multiplexing • Sample and Hold Circuits • Digital Filters • Operational Amplifier Gain Switching Networks • Integrator Reset Circuits Pinout HS1-201HSRH, SBDIP (CDIP2-T16) HS9-201HSRH, FLATPACK (CDFP4-F16) TOP VIEW Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE (oC) 5962F9961801VEC HS1-201HSRH-Q -55 to 125 5962F9961801QEC HS1-201HSRH-8 -55 to 125 5962F9961801VXC HS9-201HSRH-Q -55 to 125 5962F9961801QXC HS9-201HSRH-8 -55 to 125 5962F9961801V9A HS0-201HSRH-Q -55 to 125 HS1-201HSRH/PROTO HS1-201HSRH/PROTO -55 to 125 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 A1 OUT1 IN1 V- GND IN4 A4 OUT4 A2 IN2 V+ NC IN3 OUT3 A3 OUT2 Data Sheet June 2000 2 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Die Characteristics DIE DIMENSIONS 2667µm x 4623µm (105 mils x 182 mils) Thickness: 483µm ±25.4µm (19 mils ±1 mil) INTERFACE MATERIALS Glassivation Type: Phosphorus Silicon Glass (PSG) Thickness: 8.0kÅ +/-1.0kÅ Metallization Type: Ti/AlCu Thickness: 16.0kÅ +/- 2kÅ Substrate Rad Hard Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <2.0 x 105 A/cm2 Transistor Count 328 Metallization Mask Layout HS-201HSRH OUT4 IN4 GND V- IN1 A4 A3 A1 A2 OUT3 IN3 V+ IN2 OUT2 OUT1 HS-201HSRH