单管G60N100资料

©2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A IGBT FG L60N 100B N TD FGL60N100BNTD NPT-Trench IGBT General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A • High Input Impedance • Built-in Fast Recovery Diode Absolute Maximum Ratings TC = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Description FGL60N100BNTD Units VCES Collector-Emitter Voltage 1000 V VGES Gate-Emitter Voltage ± 25 V IC Collector Current @ TC = 25°C 60 A Collector Current @ TC = 100°C 42 A ICM (1) Pulsed Collector Current 120 A IF Diode Continuous Forward Current @ TC = 100°C 15 A PD Maximum Power Dissipation @ TC = 25°C 180 W Maximum Power Dissipation @ TC = 100°C 72 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W Application Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance G C E TO-264 G C E G C E Download from www.ICminer.com Electronic-Library Service FGL60N100BNTD Rev. A FG L60N 100B N TD ©2004 Fairchild Semiconductor Corporation Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 -- -- V ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V -- -- 1.0 mA IGES G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.0 7.0 V VCE(sat) Collector to Emitter Saturation Voltage IC = 10A, VGE = 15V -- 1.5 1.8 V IC = 60A, VGE = 15V -- 2.5 2.9 V Dynamic Characteristics Cies Input Capacitance VCE=10V, VGE = 0V, f = 1MHz -- 6000 -- pF Coes Output Capacitance -- 260 -- pF Cres Reverse Transfer Capacitance -- 200 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 600 V, IC = 60A, RG = 51Ω, VGE=15V, Resistive Load, TC = 25°C -- 140 -- ns tr Rise Time -- 320 -- ns td(off) Turn-Off Delay Time -- 630 -- ns tf Fall Time -- 130 250 ns Qg Total Gate Charge VCE = 600 V, IC = 60A, VGE = 15V , , TC = 25°C -- 275 350 nC Qge Gate-Emitter Charge -- 45 -- nC Qgc Gate-Collector Charge -- 95 -- nC Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 15A -- 1.2 1.7 V IF = 60A -- 1.8 2.1 V trr Diode Reverse Recovery Time IF = 60A di/dt = 20 A/us 1.2 1.5 us IR Instantaneous Reverse Current VRRM = 1000V -- 0.05 2 uA Download from www.ICminer.com Electronic-Library Service FGL60N100BNTD Rev. A FG L60N 100B N TD ©2004 Fairchild Semiconductor Corporation 0 1 2 3 4 5 0 20 40 60 80 100 20V 15V 10V 9V 8V 7V V GE = 6V Common Emitter TC = 25℃ C ol le ct or C ur re nt , I C [A ] Collector-Emitter Voltage, VCE [V] 0 1 2 3 4 0 10 20 30 40 50 60 70 80 90 TC = 125℃ TC = 25℃ Common Emitter VGE = 15V TC = 25 ℃━━ TC = 125 ------℃ C ol le ct or C ur re nt , I C [A ] Collector-Emitter Voltage, VCE [V] -50 0 50 100 150 1 2 3 IC=10A 30A 60A 80A Common Emitter VGE=15V C ol le ct or -E m itt er V ol ta ge , V C E [ V] Case Temperature, TC [ ]℃ 4 8 12 16 20 0 2 4 6 8 10 Common Emitter TC= - 40 OC IC=10A 80A 60A 30A C ol le ct or -E m itt er V ol ta ge , V C E[V ] Gate-Emitter Voltage, VGE [V] 4 8 12 16 20 0 2 4 6 8 10 Common Emitter TC = 25℃ 80A 60A 30A IC = 10AC ol le ct or -E m itt er V ol ta ge , V C E [ V] Gate-Emitter Voltage, VGE [V] 4 8 12 16 20 0 2 4 6 8 10 Common Emitter TC = 125℃ 80A 60A 30A IC = 10AC ol le ct or -E m itt er V ol ta ge , V C E [ V] Gate-Emitter Voltage, VGE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Fig 4. Saturation Voltage vs. VGE Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE Download from www.ICminer.com Electronic-Library Service FGL60N100BNTD Rev. A FG L60N 100B N TD ©2004 Fairchild Semiconductor Corporation 0 5 10 15 20 25 30 100 1000 10000 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ Cres Coes Cies C ap ac ita nc e [p F] Collector-Emitter Voltage, VCE [V] 0 50 100 150 200 10 100 1000 10000 VCC=600V, IC=60A VGE=± 15V TC=25 oC Tdoff Tdon Tr Tf Sw itc hi ng T im e [n s] Gate Resistance, RG [Ω ] 10 20 30 40 50 60 100 1000 V C C=600V , R g =51Ω V G E=± 15V , TC=25℃ Tdon T r T f Tdo ff Sw itc hi ng T im e [n s] C o llec to r C urren t, IC [A ] 0 50 100 150 200 250 300 0 5 10 15 20 Common Emitter VCC=600V, RL=10 Ω TC=25 ℃ G at e- Em itt er V ol ta ge ,V G E [ V] Gate Charge, Qg [nC] 1 10 100 1000 0.1 1 10 100 Single Nonrepetitive Pulse TC = 25℃ Curve must be darated linearly with increase in temperature 50us 100us 1ms DC Operation IC MAX. (Pulsed) IC MAX. (Continuous) C ol le ct or C ur re nt , I C [A ] Collector-Emitter Voltage, VCE [V] 10-4 10-3 10-2 10-1 100 101 1E-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse Th er m al R es po ns e, Z TH JC [ /W ] ℃ Rectangular Pulse Duration [sec] Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs. Gate Resistance Fig 9. Switching Characteristics vs. Collector Current Fig 10. Gate Charge Characteristics Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT Download from www.ICminer.com Electronic-Library Service FGL60N100BNTD Rev. A FG L60N 100B N TD ©2004 Fairchild Semiconductor Corporation Fig 17. Junction capacitance 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 TC = 25 ℃ TC = 100 ℃ Forward Voltage, VFM [V] Fo rw ar d C ur re nt , I F[A ] 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Irr trr IF=60A TC=25℃ di/dt [A/ ]㎲ R ev er se R ec ov er y Ti m e, t r r [ ] ㎲ 0 20 40 60 80 100 120 R everse R ecovery C urrent Irr [A] 10 20 30 40 50 60 0.4 0.6 0.8 1.0 1.2 Irr trr Forward Current, IF [A] R ev er se R ec ov er y Ti m e, t rr [ ] ㎲ 4 6 8 10 12 di/dt=-20A/㎲ TC=25℃ Reverse R ecovery C urrent Irr [A] 0 300 600 900 1E-3 0.01 0.1 1 10 100 1000 TC = 150 ℃ TC= 25 ℃R ev er se C ur re nt , I R [u A] Reverse Voltage, VR [V] 0.1 1 10 100 0 50 100 150 200 250 TC = 25 ℃ C ap ac ita nc e, C j [p F] Reverse Voltage, VR [V] Fig 14. Reverse Recovery Characteristics vs. di/dt Fig 13. Forward Characteristics Fig 15. Reverse Recovery Characteristics vs. Forward Current Fig 16. Reverse Current vs. Reverse Voltage Download from www.ICminer.com Electronic-Library Service ©2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A FG L60N 100B N TD Package Dimension 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 4.90 ±0.20 20.00 ±0.20 (8.30) (8.30) (1.00) (0.50) (2.00) (7.00) (R1.00) (R2.00) ø3.30 ±0.20 (7.00) (1.50) (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 2.80 ±0.30 1.00 +0.25 –0.10 0.60 +0.25 –0.10 1. 50 ±0 .2 0 6. 00 ±0 .2 0 20 .0 0 ±0 .2 0 20 .0 0 ±0 .5 0 5. 00 ±0 .2 0 3. 50 ±0 .2 0 2. 50 ±0 .1 0 (9. 00 ) (9. 00 ) (2. 00 ) (1. 50 ) (0. 15 ) (2. 80 ) (4. 00 ) (11 .00 ) TO-264 Dimensions in Millimeters Download from www.ICminer.com Electronic-Library Service DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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