MMG3014NT1

MMG3014NT1 1 RF Device Data Freescale Semiconductor, Inc. Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 4000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features • Frequency: 40--4000 MHz • P1dB: 25 dBm @ 900 MHz • Small--Signal Gain: 19.5 dB @ 900 MHz • Third Order Output Intercept Point: 40.5 dBm @ 900 MHz • Single 5 Volt Supply • Active Bias • Cost--effective SOT--89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel. 40--4000 MHz, 19.5 dB 25 dBm InGaP HBT MMG3014NT1 CASE 2142--01 SOT--89 PLASTIC Table 1. Typical Performance (1) Characteristic Symbol 900 MHz 2140 MHz 3500 MHz Unit Small--Signal Gain (S21) Gp 19.5 15 10 dB Input Return Loss (S11) IRL --25 --12 --8 dB Output Return Loss (S22) ORL --11 --13 --19 dB Power Output @1dB Compression P1dB 25 25.8 25 dBm Third Order Output Intercept Point OIP3 40.5 40.5 40 dBm 1. VCC = 5 Vdc, TA = 25°C, 50 ohm system, application circuit tuned for specified frequency. Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 300 mA RF Input Power Pin 25 dBm Storage Temperature Range Tstg --65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. Table 3. Thermal Characteristics Characteristic Symbol Value (3) Unit Thermal Resistance, Junction to Case Case Temperature 81°C, 5 Vdc, 135 mA, no RF applied RθJC 27.4 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Document Number: MMG3014NT1 Rev. 3, 10/2011 Freescale Semiconductor Technical Data © Freescale Semiconductor, Inc., 2008, 2011. All rights reserved. 2 RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TA = 25°C, 50 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 18.5 19.5 — dB Input Return Loss (S11) IRL — --25 — dB Output Return Loss (S22) ORL — --11 — dB Power Output @ 1dB Compression P1dB — 25 — dBm Third Order Output Intercept Point OIP3 — 40.5 — dBm Noise Figure NF — 5.7 — dB Supply Current (1) ICC 110 135 160 mA Supply Voltage (1) VCC — 5 — V 1. For reliable operation, the junction temperature should not exceed 150°C. Table 5. Functional Pin Description Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 °C Figure 1. Functional Diagram 321 2 MMG3014NT1 3 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS 5 25 0 TC = --40°C f, FREQUENCY (GHz) Figure 2. Small--Signal Gain (S21) versus Frequency 20 15 1 2 3 4 G p, SM AL L- -S IG N AL G AI N (d B) 85°C 4 0 0 S22 f, FREQUENCY (GHz) Figure 3. Input/Output Return Loss versus Frequency VCC = 5 Vdc --5 1 2 3 S1 1, S2 2 (d B) 26 9 23 6 Pout, OUTPUT POWER (dBm) Figure 4. Small--Signal Gain versus Output Power 21 19 17 15 10 14 11 3.532.521.510.5 26 24 f, FREQUENCY (GHz) Figure 5. P1dB versus Frequency P1 dB ,1 dB C O M PR ES SI O N PO IN T (d Bm ) 25 6 0 200 0 VCC, COLLECTOR VOLTAGE (V) Figure 6. Collector Current versus Collector Voltage 180 140 20 1 5 I C C ,C O LL EC TO R C U R R EN T (m A) 100 2 3 4 40 f, FREQUENCY (GHz) Figure 7. Third Order Output Intercept Point versus Frequency 42 40 38 1 2 3 VCC = 5 Vdc 1 MHz Tone Spacing O IP 3, TH IR D O R D ER O U TP U T IN TE R C EP T PO IN T (d Bm ) 18 G p, SM AL L- -S IG N AL G AI N (d B) VCC = 5 Vdc 900 MHz 2140 MHz 1960 MHz 2600 MHz 3500 MHz 160 120 80 --10 S11 22 10 25°C 13 60 40 VCC = 5 Vdc VCC = 5 Vdc 4 RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 50 OHM TYPICAL CHARACTERISTICS 4.5 VCC, COLLECTOR VOLTAGE (V) Figure 8. Third Order Output Intercept Point versus Collector Voltage 42 40 38 O IP 3, TH IR D O R D ER O U TP U T IN TE R C EP T PO IN T (d Bm ) 4.7 5.55.1 f = 900 MHz 1 MHz Tone Spacing 100--40 --20 0 20 40 60 80 T, TEMPERATURE (_C) Figure 9. Third Order Output Intercept Point versus Case Temperature 40 38 O IP 3, TH IR D O R D ER O U TP U T IN TE R C EP T PO IN T (d Bm ) Figure 10. Third Order Intermodulation versus Output Power Pout, OUTPUT POWER (dBm) IM D ,T H IR D O R D ER IN TE R M O D U LA TI O N D IS TO RT IO N (d Bc ) 10 13 16 --80 --30 --50 --60 --40 150 103 105 120 Figure 11. MTTF versus Junction Temperature 104 125 130 135 140 145 TJ, JUNCTION TEMPERATURE (°C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 135 mA M TT F (Y EA R S) 4 0 10 0 f, FREQUENCY (GHz) Figure 12. Noise Figure versus Frequency 6 4 2 1 2 3 N F, N O IS E FI G U R E (d B) --70 --20 Pout, OUTPUT POWER (dBm) Figure 13. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power --30 --40 --50 --60 191613 AC PR ,A D JA C EN T C H AN N EL PO W ER R AT IO (d Bc ) 25 42 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing 25 10 22 4.9 5.3 --70 19 22 8 VCC = 5 Vdc VCC = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing MMG3014NT1 5 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 800--1000 MHz Figure 14. 50 Ohm Test Circuit Schematic Figure 15. S21, S11 and S22 versus Frequency --40 700 f, FREQUENCY (MHz) S11 800 900 1000 1100 30 10 0 --10 --20 --30 S2 1, S1 1, S2 2 (d B) S21 S22 RF OUTPUT RF INPUT VSUPPLY Z1 Z2 C1 Z5 C2 R1 L1 VCC DUT Figure 16. 50 Ohm Test Circuit Component Layout Z1, Z8 0.274″ x 0.058″ Microstrip Z2, Z7 0.073″ x 0.058″ Microstrip Z3 0.066″ x 0.058″ Microstrip Z4 0.509″ x 0.058″ Microstrip Z5 0.172″ x 0.058″ Microstrip Z6 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″, εr = 4.1 Z8 C7 Z7Z6 C3 C4 Z4Z3 C6C5 20 MMG30XX Rev 2 C1 C5 R1 C4 C3 L1 C2 C7 C6 VCC = 5 Vdc Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 220 pF Chip Capacitors C0805C221J5GAC Kemet C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 2.2 μF Chip Capacitor C0805C225J4RAC Kemet C5 0.2 pF Chip Capacitor 12065J0R2BS AVX C6 4.7 pF Chip Capacitor C0603C479J5GAC Kemet C7 1.8 pF Chip Capacitor C1206C189D5GAC Kemet L1 10 nH Chip Inductor HK160810NJ--T Taiyo Yuden R1 0 Ω Chip Resistor ERJ3GEY0R00V Panasonic 6 RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 50 OHM APPLICATION CIRCUIT: 1800--2200 MHz Figure 17. 50 Ohm Test Circuit Schematic Figure 18. S21, S11 and S22 versus Frequency --20 1600 f, FREQUENCY (MHz) S22 1800 2200 2400 20 10 0 --10 S2 1, S1 1, S2 2 (d B) S21 S11 RF OUTPUT RF INPUT VSUPPLY Z1 Z2 C1 Z4 C2 R1 L1 VCC DUT Figure 19. 50 Ohm Test Circuit Component Layout Z1, Z7 0.347″ x 0.058″ Microstrip Z2 0.399″ x 0.058″ Microstrip Z3 0.176″ x 0.058″ Microstrip Z4 0.172″ x 0.058″ Microstrip Z5 0.162″ x 0.058″ Microstrip Z6 0.241″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″, εr = 4.1 Z7 C6 Z6Z5 C3 C4 Z3 C5 MMG30XX Rev 2 C1 R1 C4 C3 L1 C2 2000 C5 C6 VCC = 5 Vdc Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 pF Chip Capacitors C0805C220J5GAC Kemet C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 2.2 μF Chip Capacitor C0805C225J4RAC Kemet C5 1.5 pF Chip Capacitor C0603C159J5RAC Kemet C6 1.1 pF Chip Capacitor C0603C119J5GAC Kemet L1 15 nH Chip Inductor HK160815NJ--T Taiyo Yuden R1 0 Ω Chip Resistor ERJ3GEY0R00V Panasonic MMG3014NT1 7 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2300--2700 MHz Figure 20. 50 Ohm Test Circuit Schematic Figure 21. S21, S11 and S22 versus Frequency --30 2100 f, FREQUENCY (MHz) S22 2300 2700 2900 20 10 0 --10 S2 1, S1 1, S2 2 (d B) S21 S11 RF OUTPUT RF INPUT VSUPPLY Z1 Z2 C1 Z4 C2 R1 L1 VCC DUT Figure 22. 50 Ohm Test Circuit Component Layout Z1, Z7 0.347″ x 0.058″ Microstrip Z2 0.488″ x 0.058″ Microstrip Z3 0.087″ x 0.058″ Microstrip Z4 0.136″ x 0.058″ Microstrip Z5 0.036″ x 0.058″ Microstrip Z6 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″, εr = 4.1 Z7 C6 Z6Z5 C3 C4 Z3 C5 MMG30XX Rev 2 C1 R1 C4 C3 L1 C2 2500 C5 C6 --20 VCC = 5 Vdc Table 10. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 pF Chip Capacitors C0805C220J5GAC Kemet C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 2.2 μF Chip Capacitor C0805C225J4RAC Kemet C5, C6 1.1 pF Chip Capacitors C0603C119J5GAC Kemet L1 15 nH Chip Inductor HK160815NJ--T Taiyo Yuden R1 0 Ω Chip Resistor ERJ3GEY0R00V Panasonic 8 RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 50 OHM APPLICATION CIRCUIT: 3400--3600 MHz Figure 23. 50 Ohm Test Circuit Schematic Figure 24. S21, S11 and S22 versus Frequency --30 3400 f, FREQUENCY (MHz) S22 3450 3550 3600 20 10 0 --10 --20 S2 1, S1 1, S2 2 (d B) S21 S11 RF OUTPUT RF INPUT VSUPPLY Z1 Z2 C1 Z5 C2 R1 L1 VCC DUT Figure 25. 50 Ohm Test Circuit Component Layout Z1, Z8 0.347″ x 0.058″ Microstrip Z2 0.068″ x 0.058″ Microstrip Z3 0.419″ x 0.058″ Microstrip Z4, Z5 0.088″ x 0.058″ Microstrip Z6 0.084″ x 0.058″ Microstrip Z7 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″, εr = 4.1 Z8 C7 Z7Z6 C3 C4 Z4Z3 C6C5 MMG30XX Rev 2 C1 R1 C4 C3 L1 C2C5 3500 C6 C7 VCC = 5 Vdc Table 11. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 3.3 pF Chip Capacitor C0805C339J5GAC Kemet C2 2.0 pF Chip Capacitor C0805C209J5GAC Kemet C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 2.2 μF Chip Capacitor C0805C225J4RAC Kemet C5 0.6 pF Chip Capacitor 06035J0R6BS AVX C6 0.9 pF Chip Capacitor 06035J0R9BS AVX C7 0.8 pF Chip Capacitor 06035J0R8BS AVX L1 56 nH Chip Inductor HK160856NJ--T Taiyo Yuden R1 0 Ω Chip Resistor ERJ3GEY0R00V Panasonic MMG3014NT1 9 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S--Parameters (VCC = 5 Vdc, TA = 25°C, 50 Ohm System) f MHz S11 S21 S12 S22 |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ 250 0.622 174.6 10.280 153.8 0.0336 0.6 0.448 --171.6 300 0.618 174.0 10.107 148.3 0.0336 0.3 0.457 --171.9 350 0.616 173.4 9.933 143.1 0.0337 --0.1 0.465 --172.5 400 0.613 173.0 9.760 138.3 0.0337 --0.4 0.475 --173.3 450 0.611 172.5 9.586 133.8 0.0338 --0.6 0.483 --174.0 500 0.611 172.0 9.300 129.8 0.0338 --0.8 0.490 --174.9 550 0.610 171.4 9.009 126.0 0.0339 --1.0 0.497 --175.8 600 0.610 170.9 8.716 122.4 0.0339 --1.2 0.503 --176.8 650 0.610 170.4 8.363 119.2 0.0340 --1.4 0.508 --177.9 700 0.611 169.9 8.064 116.2 0.0340 --1.6 0.512 --178.9 750 0.615 169.5 7.734 113.3 0.0341 --1.7 0.517 176.5 800 0.618 171.8 7.403 110.9 0.0342 --1.8 0.526 175.5 850 0.621 171.4 7.073 108.4 0.0342 --1.9 0.533 174.5 900 0.625 170.9 6.838 106.0 0.0343 --2.0 0.536 173.5 950 0.624 170.2 6.629 103.7 0.0343 --2.2 0.536 172.6 1000 0.624 169.6 6.422 101.5 0.0344 --2.3 0.537 171.8 1050 0.624 168.9 6.227 99.4 0.0344 --2.5 0.537 170.9 1100 0.625 168.3 6.044 97.3 0.0346 --2.7 0.538 169.9 1150 0.626 167.6 5.866 95.4 0.0347 --2.8 0.538 169.1 1200 0.628 166.9 5.700 93.5 0.0349 --3.0 0.539 168.2 1250 0.629 166.1 5.545 91.7 0.0351 --3.2 0.540 167.3 1300 0.632 165.4 5.393 89.9 0.0352 --3.4 0.540 166.5 1350 0.634 164.6 5.257 88.2 0.0354 --3.6 0.541 165.6 1400 0.636 163.8 5.117 86.5 0.0355 --3.8 0.543 164.9 1450 0.640 163.0 4.988 84.8 0.0356 --4.0 0.544 164.1 1500 0.643 162.2 4.864 83.2 0.0357 --4.2 0.545 163.3 1550 0.646 161.3 4.742 81.7 0.0359 --4.4 0.547 162.6 1600 0.649 160.5 4.630 80.1 0.0360 --4.5 0.549 161.8 1650 0.653 159.7 4.517 78.6 0.0361 --4.8 0.550 161.1 1700 0.657 158.9 4.414 77.1 0.0362 --5.0 0.552 160.3 1750 0.661 158.0 4.312 75.6 0.0363 --5.2 0.554 159.6 1800 0.665 157.2 4.215 74.2 0.0364 --5.5 0.556 158.9 1850 0.669 156.4 4.123 72.7 0.0364 --5.7 0.557 158.2 1900 0.673 155.5 4.033 71.3 0.0365 --6.0 0.559 157.4 1950 0.677 154.7 3.947 69.8 0.0366 --6.3 0.560 156.7 2000 0.681 153.8 3.864 68.4 0.0367 --6.6 0.562 156.0 2050 0.685 153.0 3.783 67.0 0.0367 --6.9 0.563 155.2 2100 0.689 152.2 3.707 65.5 0.0368 --7.2 0.564 154.4 2150 0.693 151.3 3.633 64.1 0.0369 --7.6 0.564 153.6 2200 0.697 150.5 3.562 62.7 0.0369 --7.9 0.565 152.8 2250 0.701 149.6 3.494 61.3 0.0370 --8.3 0.565 152.0 2300 0.705 148.7 3.426 59.8 0.0371 --8.7 0.565 151.2 2350 0.709 147.8 3.363 58.4 0.0371 --9.1 0.564 150.3 (continued) 10 RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 50 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S--Parameters (VCC = 5 Vdc, TA = 25°C, 50 Ohm System) (continued) f MHz S11 S21 S12 S22 |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ 2400 0.712 146.9 3.299 57.0 0.0372 --9.5 0.564 149.5 2450 0.715 146.0 3.240 55.6 0.0373 --9.9 0.563 148.6 2500 0.719 145.0 3.181 54.1 0.0373 --10.3 0.562 147.7 2550 0.722 144.1 3.124 52.7 0.0374 --10.8 0.562 146.8 2600 0.724 143.1 3.071 51.3 0.0374 --11.2 0.561 145.9 2650 0.728 142.2 3.017 49.9 0.0375 --11.6 0.560 145.0 2700 0.730 141.2 2.968 48.5 0.0376 --12.0 0.559 144.0 2750 0.733 140.2 2.920 47.1 0.0377 --12.4 0.559 143.1 2800 0.736 139.2 2.872 45.8 0.0378 --12.9 0.558 142.1 2850 0.738 138.2 2.828 44.4 0.0380 --13.4 0.557 141.1 2900 0.740 137.2 2.784 43.0 0.0381 --13.8 0.557 140.1 2950 0.742 136.2 2.743 41.7 0.0382 --14.4 0.557 139.1 3000 0.745 135.2 2.703 40.3 0.0384 --14.9 0.557 138.1 3050 0.747 134.2 2.664 39.0 0.0385 --15.4 0.557 137.1 3100 0.749 133.1 2.627 37.6 0.0386 --15.9 0.557 136.1 3150 0.751 132.1 2.590 36.3 0.0388 --16.4 0.557 135.1 3200 0.753 131.1 2.555 35.0 0.0389 --17.0 0.558 134.1 3250 0.756 130.1 2.521 33.7 0.0390 --17.5 0.558 133.2 3300 0.758 129.1 2.487 32.4 0.0391 --18.0 0.559 132.2 3350 0.760 128.1 2.455 31.1 0.0393 --18.5 0.560 131.3 3400 0.762 127.1 2.422 29.8 0.0394 --19.0 0.560 130.5 3450 0.764 126.1 2.392 28.6 0.0395 --19.5 0.561 129.6 3500 0.766 125.1 2.361 27.3 0.0396 --20.0 0.562 128.9 3550 0.768 124.2 2.331 26.1 0.0397 --20.5 0.563 128.1 3600 0.770 123.2 2.302 24.9 0.0398 --21.0 0.564 127.4 3650 0.772 122.3 2.273 23.7 0.0399 --21.4 0.565 126.7 3700 0.774 121.3 2.246 22.6 0.0400 --21.8 0.566 126.1 3750 0.775 120.4 2.218 21.5 0.0401 --22.2 0.567 125.6 3800 0.777 119.5 2.192 20.4 0.0403 --22.6 0.568 125.1 3850 0.778 118.6 2.167 19.2 0.0404 --23.0 0.569 124.6 3900 0.780 117.6 2.142 18.1 0.0405 --23.4 0.570 124.2 3950 0.781 116.7 2.118 17.1 0.0406 --23.9 0.571 123.7 4000 0.783 115.8 2.091 16.0 0.0407 --24.2 0.572 123.5 MMG3014NT1 11 RF Device Data Freescale Semiconductor, Inc. Figure 26. PCB Pad Layout for SOT--89A 4.35 3.00 2X 45° 3X 0.70 2X 1.50 0.85 2X 1.25 1.90 Figure 27. Product Marking M3014N YYWW 12 RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 PACKAGE DIMENSIONS MMG3014NT1 13 RF Device Data Freescale Semiconductor, Inc. 14 RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 MMG3014NT1 15 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing Software • .s2p File Development Tools • Printed Circuit Boards Reference Designs • 2110--2170 MHz, 4 W, 28 V W--CDMA Smart Demo Reference Design (Devices MMG3014N, MW7IC2240N) For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2008 • Initial Release of Data Sheet 1 Sept. 2008 • Updated Fig. 15, “S21, S11 and S22 versus Frequency”, to correct S11 and S22 curve label transposition error, p. 6 • Updated data in Table 12, “Common Emitter S-Parameters”, for better simulation response, p. 10 and 11 2 Jan. 2011 • Corrected temperature at which ThetaJC is measured from 25°C to 81°C and added “no RF applied” to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1 • Removed ICC bias callout from applicable graphs as bias is not a controlled value, p. 4--9 • Removed ICC bias callout from Table 12, Common Source S--Parameters heading as bias is not a controlled value, 10--11 • Added .s2p file and Printed Circuit Boards availability to Software and Tools, p. 16 • Added Reference Design availability to Development Tools, p. 16 3 Oct. 2011 • Table 1, Maximum Ratings, increased Input Power from 15 dBm to 25 dBm to reflect the true capability of the device, p. 1 • Changed ESD Human Body Model rating from Class 1C to Class 1B to reflect recent ESD test results of the device, p. 2 • Corrected part number for the C7 capacitor in Table 8, 50 Ohm Test Circuit Component Designations and Values, from C0603C189J5GAC to C1206C189D5GAC p. 5. • Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02 (SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has slight dimensional differences., p. 1, 11--14. Refer to PCN13337, GaAs Fab Transfer. 16 RF Device Data Freescale Semiconductor, Inc. MMG3014NT1 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. 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