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半导体封装制程与设备材料知识介绍-FE

2018-05-18 72页 ppt 6MB 19阅读

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半导体封装制程与设备材料知识介绍-FE半导体封装制程与设备材料知识简介PrepareBy:WilliamGuo2007.11Update半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试 封装前段(B/G-MOLD)-封装后段(MARK-PLANT)-测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離,並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半导体制程封裝型式(PACKAGE)封裝型式封裝型式封裝型式封裝型式封裝型式AssemblyMainProcessDieCure(Optional)DieBondDieSawPl...
半导体封装制程与设备材料知识介绍-FE
半导体封装制程与设备材料知识简介PrepareBy:WilliamGuo2007.11Update半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试 封装前段(B/G-MOLD)-封装后段(MARK-PLANT)-测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離,並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半导体制程封裝型式(PACKAGE)封裝型式封裝型式封裝型式封裝型式封裝型式AssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBondSMT(Optional)半导体设备供应商介绍-前道部分 PROCESS VENDOR MODEL SMT-PRINTER DEK HOR-2I SMT–CHIPMOUNT SIMENS HS-60 TAPING NITTO DR3000-III  INLINEGRINDER&POLISH ACCRETECH PG300RM STANDALONEGRINDER DISCO 8560 DETAPING NITTO MA3000  WAFERMOUNTER NITTO MA3000 DICINGSAW DISCO DFD6361 TSK A-WD-300T半导体设备供应商介绍-前道部分 PROCESS VENDOR MODEL DIEBOND HITACHI DB700 ESEC ESEC2007/2008 ASM ASM889898 CUREOVEN C-SUN QDM-4S WIREBONDER K&S K&SMAXUMULTRA SKW UTC-2000 ASM Eagle60 PLASMACLEAN MARCH AP1000 TEPLA TEPLA400 Mold TOWA YPS-SERIES ASA OMEGA3.8常用术语介绍 SOP-StandardOperationProcedure操作手册 WI–WorkingInstruction作业指导书 PM–PreventiveMaintenance预防性维护 FMEA-FailureModeEffectAnalysis失效模式影响 SPC-StatisticalProcessControl统计制程控制 DOE-DesignOfExperiment试验设计 IQC/OQC-Incoming/OutingQualityControl来料/出货质量检验 MTBA/MTBF-MeanTimebetweenassist/Failure平均无故障工作时间 CPK-品质参数 UPH-UnitsPerHour每小时产出 QC7Tools(QualityControl品管七工具) OCAP(OutofControlActionPlan异常改善) 8D(问题解决八大步骤) ECNEngineeringChangeNotice(制程变更通知) ISO9001,14001–质量管理体系前道FOL后道EOLWireBond引线键合Mold模塑LaserMark激光印字LaserCutting激光切割EVI产品目检SanDiskAssemblyProcessFlowSanDisk封装流程DiePrepare芯片预处理DieAttach芯片粘贴WaferIQC来料检验PlasmaClean清洗PlasmaClean清洗SawSingulation切割成型SMT表面贴装PMC模塑后烘烤SMT(表面贴装) ---包括锡膏印刷(Solderpasteprinting),置件(Chipshooting),回流焊(Reflow),DI水清洗(DIwatercleaning),自动光学检查(Automaticopticalinspection),使贴片零件牢固焊接在substrate上DiePrepare(芯片预处理)ToGrindthewafertotargetthicknessthenseparatetosinglechip---包括来片目检(WaferIncoming),贴膜(WaferTape),磨片(BackGrind),剥膜(Detape),贴片(WaferMount),切割(WaferSaw)等系列工序,使芯片达到工艺所要求的形状,厚度和尺寸,并经过芯片目检(DVI)检测出所有由于芯片生产,分类或处理不当造成的废品.WafertapeBackGrindWaferDetapeWaferSawInlineGrinding&Polish--AccretechPG300RMTransferKeyTechnology:1.LowThicknessVariation:+/_1.5Micron2.GoodRoughness:+/-0.2Micron3.ThinWaferCapacity:Upto50Micron4.All-In-Onesolution,ZeroHandleRisk2.Grinding相关材料ATAPE麦拉BGrinding砂轮CWAFERCASSETTLE工艺对TAPE麦拉的要求:1。MOUNTNodelamination STRONG2。SAW ADHESIONNodieflyingoffNodiecrack工艺对麦拉的要求:3。EXPANDING TAPEDiedistance ELONGATION Uniformity 4。PICKINGUP WEAK ADHESIONNocontamination3.Grinding辅助设备AWaferThicknessMeasurement厚度测量仪一般有接触式和非接触式光学测量仪两种;BWaferroughnessMeasurement粗糙度测量仪主要为光学反射式粗糙度测量方式;4.Grinding配套设备ATaping贴膜机BDetaping揭膜机CWaferMounter贴膜机WaferTaping--NittoDR300IICutTapeTapingAlignmentTransferTransferBackKeyTechnology:1.HighTransferAccuracy:+/_2Micron2.HighCutAccuracy:+/-0.2mm3.HighThroughput:50pcswafer/Hour4.ZeroVoidandZeroWaferBrokenDetapingl  Wafermount Waferframe晶圓切割(Dicing)Dicing设备:ADISCO6361系列BACCERTECH东京精密AW-300TMainSectionsIntroduction CuttingArea:Spindles(Blade,Flange,CarbonBrush),CuttingTable,Axes(X,Y1,Y2,Z1,Z2,Theta),OPC LoaderUnits:Spinner,Elevator,Cassette,RotationArmBladeClose-ViewBladeCuttingWaterNozzleCoolingWaterNozzleDieSawing–Disco6361KeyTechnology:1.Twin-SpindleStructure.2.X-axisspeed:upto600mm/s.3.SpindleRotarySpeed:Upto45000RPM.4.CuttingSpeed:Upto80mm/s.5.Z-axisrepeatability:1um.6.PositioningAccuracy:3um.RearFrontAFewConcepts BBD(BladeBrokenDetector) Cutter-set:ContactandOptical PrecisionInspection Up-CutandDown-Cut Cut-inandCut-remain晶圓切割(Dicing)Dicing相关工艺ADieChipping芯片崩角BDieCorrosive芯片腐蚀CDieFlying芯片飞片Wmax,Wmin,Lmax,DDY,DY規格— DY<0.008mm Wmax<0.070mm Wmin<0.8*刀厚 Lmax<0.035       切割時之轉速予切速:a.      轉速:指的是切割刀自身的轉速b.     切速:指的是Wafer移動速度.主軸轉速:S1230:30000~45000RPMS1440:30000~45000RPM27HEED:35000~45000RPM27HCCD:35000~45000RPM27HDDC:35000~45000RPM晶圓切割(Dicing)3.Dicing相关材料ATapeBSawBLADE切割刀CDI去离子水、RO纯水切割刀的規格規格就包括刀刃長度、刀刃寬度、鑽石顆粒大小、濃度及Nickelbondhardness軟硬度的選擇P4Sawblade对製程的影響ProperCutDepthIntoTape(切入膠膜的理想深度)分析:理想的切割深度可防止1.背崩之發生。2.切割街区的DDY理想的切割深度須切入膠膜(Tape)1/3厚度。P11切割刀的影響DiamondGritSize(鑽石顆粒大小)分析:小顆粒之鑽石1.切割品質較好。2.切割速度不宜太快。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負載電流較小。P15TAPE粘度对SAW製程的影響MountingTape(膠膜黏力)分析:使用較黏膠膜可獲得1.沒有飛Die。2.較好的切割品質。潛在風險DieAttachprocesspickupdie影響。P10晶圓切割(Dicing)4.Dicing辅助设备ACO2Bubbler二氧化碳发泡机BDIWater电阻率监测仪CDiamonflow发生器DUV照射机DieAttach(芯片粘贴)ToattachsingledietoSMTedsubstrate---把芯片粘贴到已经过表面贴装(SMT)和预烘烤(Pre-bake)后的基片上,或芯片粘贴到芯片上,并经过芯片粘贴后烘烤(DieAttachCure)固化粘结剂.Passivechip(capacitor)Substrate上片(DieBond)DieBond设备AHITACHIDB700BESEC2007/2008系列CASM829/889/898系列DieAttach–HitachiDB700KeyTechnology:1.Bondingspeed:30ms/die;2.BondingAccuracyX/Y:25um;3.AngleAccuracy:0.5degree;4.ThinDiePickUpSolution:Upto2mils(Electromagnetic&Multi-StepMode);5.Integrate&InlineModule:XMemory+1controller;6.Multi-DiestackDieCapacity:Upto8layersonce;上片(DieBond)2.DieBond相关工艺 X,YPLACEMENT;BLT;TILT;ROTATIONTHETA;CPK DIEROTATIONTHETA PLACEMENTACCURACYX,Y(CPK) BONDLINETHICKNESS(CPK) VOID DIESHARE上片(DieBond)3.DieBond相关材料ASubstrate/LeadframeBDieAttachFilmCWaferafterSawDMagazine弹夹Substrate BasicStructure:SubstrateBasicInformationCore: 玻璃纤维+树脂,0.1-0.4mm镀铜层: 25um+/-5um镀镍层: 5.0-12.5um镀金层: 0.50-1.10umSolderMask:25um+/-5um总厚度: 0.10-0.56mm發料烘烤線路形成(內層)AOI自動光學檢測壓合4layer2layer蝕薄銅綠漆線路形成塞孔鍍銅Deburr鑽孔鍍Ni/Au包裝終檢O/S電測成型AOI自動光學檢測出貨BGA基板製造流程(option)上片(DieBond)4.DieBond辅助设备A银浆搅拌机利用公转自转离心力原理脱泡及混合;主要参数有:MIXING/DEFORMINGREVOLUTIONSPEED外加计时器;公转用于去泡;自转用于混合;BCuringOven无氧化烤箱主要控制要素:N2流量;排气量;profile温度曲线;每箱摆放Magazine数量;CWafermapping应用WireBond(引线键合)DietoPackageInterconnectsHowadieisconnectedtothepackageorboard.---用金线将芯片上的引线孔和基片上的引脚连接,使芯片能与外部电路相连。在引线键合前需要经过等离子清洗(Pre-BondPlasmaClean)以保证键合质量,在引线键合后需要经过内部目检(IVI),检测出所有芯片预处理,芯片粘贴和引线键合产生的废品.WireBond–K&SUltraKeyTechnology:1.Diepadopening(Min.):45um.2.Diepadspitch(Min.):60µm.3.SubstrateLeadwidth&Pitch(Min.):40µm&25µm.4.Multi-LoopSelectioncoverallPackage.5.StackdiereverseBondingtoDecreaseTotalpackageThickness.DiePadSubstrateLeadGoldWireCapillaryUltrasonicPowerHeaterBondForce焊线(WireBond)1.WireBond相关工艺 PadOpen&BondPadPitch BallSize BallThickness Loopheight WirePull Ballshort CraterTest焊线(WireBond)2.WireBond相关材料 Substratewithdie Capillary GoldWireTIP..……PadPitchPadpitchx1.3=TIPHole..…..WireDiameterWirediameter+0.3~0.5=HCD………Padsize/open/1stBallCD+0.4~0.6=1stBondBallsizeFA&OR….Padpitch(um)FA >100 0,4 ~90/100 4,8,11<90 11,15 ICtype……looptypeCapillaryGoldWire GoldWireManufacturer (Nippon,SUMTOMO,TANAKA….) GoldWireData (WireDiameter,Type,EL,TS)焊线(WireBond)3.WireBond辅助设备AMicroscope用于测loopheightBWirePull拉力计(DAGE4000)CBallShear球剪切力计DPlasma微波/等离子清洗计BallSizeBallThickness 單位:um,Mil 量測倍率:50X BallThickness計算公式 60umBPP≧1/2WD=50% 60umBPP≦1/2WD=40%~50%BallSizeBallSize&BallThicknessLoopHeight 單位:um,Mil 量測倍率:20XLoopHeight線長WirePull 1LiftedBond(Rejected) 2Breakatneck(Referwire-pullspec) 3Breakatwire(Referwire-pullspec) 4Breakatstitch(Referstitch-pullspec) 5Liftedweld(Rejected)BallShear 單位:gramorg/mil² BallShear計算公式 Intermetallic(IMC有75%的共晶,ShearStrength標準為>6.0g/mil²。 SHEARSTRENGTH=BallShear/Area(g/mil²)BallShear=x;BallSize=y;Area=π(y/2)² x/π(y/2)²=zg/mil²等离子工艺PlasmaProcess 气相---固相表面相互作用 GasPhase-SolidPhaseInteraction PhysicalandChemical 分子级污染物去除 MolecularLevelRemovalofContaminants 30to300Angstroms 可去除污染物包括ContaminantsRemoved难去除污染物包括DifficultContaminantsFingerPrintsFluxGrossContaminants Oxides Epoxy SolderMask OrganicResidue Photoresist MetalSalts(NickelHydroxide)*Generally,theinorganicmaterialsaredifficultremovedbyplasmaprocessunlessitisverythin(fewmoleculeslevels).Organiccontaminantscanberemovedbyplasmaprocessunlessitisgrosscontaminants.PlasmaClean–MarchAP1000KeyTechnology:1.ArgonCondition,Nooxidation.2.VacuumPumpdustcollector.3.CleanLevel:blobTestAngle<8Degree.PlasmaPCBSubstrateDie+++++++++++Electrode+ArWellCleanedwithPlasma<8oChipArArNoClean(OrganicContamination)WellCleanedwithPlasma>80o<8oOrganicContaminationvsContactAngleWaterDropChipChipMold(模塑)Tomoldstripwithplasticcompoundthenprotectthechiptopreventfromdamaged --塑封元件的线路,以保护元件免受外力损坏,同时加强元件的物理特性,便于使用.在模塑前要经过等离子清洗(Pre-MoldPlasmaClean),以确保模塑质量.在模塑后要经过模塑后固化(PostMoldCure),以固化模塑料.塑封(Molding) Molding设备ATOWAYPS&Y-SeriesBASA OMEGA3.8机器上指示灯的说明:1、绿灯——机器处于正常工作状态;2、黄灯——机器在自动运行过程中出现了报警提示,但机器不会立即停机;3、红灯——机器在自动运行过程中出现了故障,会立即停机,需要马上处理。机器结构了解——正面机器结构了解——背面CULLBOX——用来装切下来的料饼;OUTMG——用来装封装好的L/F;配电柜——用来安装整个模机的电源和PLC,以及伺服电机的SERVOPACK。塑封(Molding)2.Molding相关材料ACompound塑封胶BMoldChase塑封模具模具介绍:模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品,以免对模具表面产生损伤。严禁使用钨钢笔、cull等非铜材料硬质工具清洁模具。塑封(Molding)3.Molding辅助设备AX-RAYX射线照射机---用于Mold后对于产品的检查BPlasma清洗机--作用原理和WB前的相同;Thanksforwatchingandlistening*Generally,theinorganicmaterialsaredifficultremovedbyplasmaprocessunlessitisverythin(fewmoleculeslevels).Organiccontaminantscanberemovedbyplasmaprocessunlessitisgrosscontaminants.
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