8205A_双MOS管

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-287.B N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. „ FEATURES * RDS(ON) ≤28mΩ @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low reverse transfer Capacitance ( CRSS = typical 150 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness „ SYMBOL G2G1 S1 S2 D „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen-Free Package 1 2 3 4 5 6 7 8 Packing UT8205AL-AG6-R UT8205AG-AG6-R SOT-26 S1 D S2 G2 D G1 - - Tape Reel UT8205AL-S08-R UT8205AG-S08-R SOP-8 D S1 S1 G1 G2 S2 S2 D2 Tape Reel UT8205AL-P08-R UT8205AG-P08-R TSSOP-8 D S1 S1 G1 G2 S2 S2 D2 Tape Reel (1) R: Tape Reel (2) AG6: SOT-26, P08:TSSOP-8 S08:SOP-8 (3) G: Halogen Free, L: Lead Free UT8205AL-AG6-R (1) Packing Type (2) Package Type (3) Lead Plating „ MARKING FOR SOT-26 UT8205A Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R502-287.B „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous ID 6 A Drain Current (Note 2) Pulsed IDM 20 A SOT-26 1.14 W Power Dissipation (Ta=25°C) (Note 3) SOP-8/TSSOP-8 PD 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 3. Pulse width limited by TJ(MAX) „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT SOT-26 110 °C/W SOP-8 78 °C/W Junction to Ambient (Note) TSSOP-8 θJA 125 °C/W Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2% „ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 20 V Breakdown Voltage Temperature Coefficient J DSS TΔ BVΔ ID=1mA, Reference to 25°C 0.03 V/°C Drain-Source Leakage Current IDSS VDS=20V, VGS=0V, 1 μA Gate-Source Leakage Current IGSS VGS=±8V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 0.5 1.5 V VGS=4.5V, ID=6.0A 28 mΩDrain-Source On-State Resistance (Note) RDS(ON) VGS=2.5V, ID=5.2A 38 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 1035 pF Output Capacitance COSS 320 pF Reverse Transfer Capacitance CRSS VDS=20V, VGS=0V, f=1.0MHz 150 pF SWITCHING PARAMETERS Turn-ON Delay Time (Note) tD(ON) 30 ns Turn-ON Rise Time tR 70 ns Turn-OFF Delay Time tD(OFF) 40 ns Turn-OFF Fall-Time tF VGS=5V, VDS=10V, RD=10Ω, RG=6Ω, ID=1A 65 ns Total Gate Charge(Note) QG 23 nC Gate Source Charge QGS 4.5 nC Gate Drain Charge QGD VDS =20V, VGS =5V, ID =6.0A 7 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS=1.7A, VGS=0V 1.2 V Diode Continuous Forward Current IS VD=VG, VS=1.3V 1.54 A Note: Surface mounted on 1 in2 copper pad of FR4 board; 208°C/W when mounted on min. UT8205A Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw QW-R502-287.B „ TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 0 D ra in C ur re nt , I D (µ A ) Drain-Source Breakdown Voltage, BVDSS(V) 10 20 30 0 5 15 25 50 100 150 200 250 300 0.20 0 Drain Current vs. Gate Threshold Voltage D ra in C ur re nt , I D (µ A ) Gate Threshold Voltage, VTH (V) 0.6 1.0 100 150 200 0.4 0.8 1.2 50 250 300 0 Source to Drain Voltage, VSD (V) 0 D ra in C ur re nt ,I D (A ) 0.2 0.60.4 0.8 0.4 0.8 1.2 1.6 2.0 0 Drain-Source On-State Resistance Characteristics D ra in C ur re nt ,I D (A ) Drain to Source Voltage, VDS (mV) 50 100 150 200 0 250 1 2 3 4 5 6 7 300 VGS=2.5V ID=5.2A VGS=4.5V ID=6A Drain Current vs. Source to Drain Voltage 1.0 0.2 0.6 1.0 1.4 1.8