2SB649A三极管(TO-92L)

2SB649A三极管(TO-92L)B,Feb,20132.COLLECTORJIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDTO-92LPlastic-EncapsulateTransistors2SB649/2SB649ATRANSISTOR(PNP)FEATURESzHighCollectorCurrentzHighCollector-EmitterBreakdownVoltagezLowSaturationVoltageMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=-1mA,IE=0-180V2SB649-120Collector-emitterbreakdownvoltageV(BR)CEOIC=-10mA,IB=02SB649A-160VEmitter-basebreakdownvoltageV(BR)EBOIE=-1mA,IC=0-5VCollectorcut-offcurrentICBOVCB=-160V,IE=0-10μAEmittercut-offcurrentIEBOVEB=-4V,IC=0-10μA2SB64960320hFE(1)VCE=-5V,IC=-150mA2SB649A60200DCcurrentgainhFE(2)*VCE=-5V,IC=-500mA30Collector-emittersaturationvoltageVCE(sat)IC=-500mA,IB=-50mA-1VBase-emittervoltageVBEVCE=-5V,IC=-150mA-1.5VCollectoroutputcapacitanceCobVCB=-10V,IE=0,f=1MHz27pFTransitionfrequencyfTVCE=-5V,IC=-150mA140MHz*PulsetestCLASSIFICATIONOFhFE(1)2SB649TYPE2SB649ARANKBCDRANGE60-120100-200160-320SymbolParameterValueUnitVCBOCollector-BaseVoltage-180V2SB649-120VCEOCollector-EmitterVoltage2SB649A-160VVEBOEmitter-BaseVoltage-5VICCollectorCurrent-1.5APCCollectorPowerDissipation900mWRθJAThermalResistanceFromJunctionToAmbient139℃/WTjJunctionTemperature150℃TstgStorageTemperature-55~+150℃www.nscn.com.cn【南京南山半导体有限公司—长电三极管选型资料】Spongestrip2000pcsSpongestripThetopgasketLabelontheInnerBoxLabelontheOuterBoxInnerBox:333mm×203mm×42mmOuterBox:493mm×400mm×264mmQALabelSealtheboxwiththetapeStamp“EMPTY”ontheemptyboxThetopgasketInnerBox:240mm×165mm×９５mmLabelontheInnerBoxOuterBox:525mm×360mm×262mmLabelontheOuterBoxQALabelSealtheboxwiththetapeStamp“EMPTY”ontheemptybox