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TDA8569汽车音响功放

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TDA8569汽车音响功放 DATA SHEET Preliminary specification File under Integrated Circuits, IC01 1997 Mar 27 INTEGRATED CIRCUITS TDA8569Q 4 × 25 W BTL quad car radio power amplifier 1997 Mar 27 2 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power ...
TDA8569汽车音响功放
DATA SHEET Preliminary specification File under Integrated Circuits, IC01 1997 Mar 27 INTEGRATED CIRCUITS TDA8569Q 4 × 25 W BTL quad car radio power amplifier 1997 Mar 27 2 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q FEATURES • Capable of driving 2 Ω loads • Requires very few external components • High output power • Low output offset voltage • Fixed gain • Diagnostic facility (distortion, short-circuit and temperature pre-warning) • Good ripple rejection • Mode select switch (operating, mute and standby) • Load dump protection • Short-circuit safe to ground and to VP and across the load • Low power dissipation in any short-circuit condition • Thermally protected • Reverse polarity safe • Electrostatic discharge protection • No switch-on/switch-off plop • Flexible leads • Low thermal resistance • Pin compatible with the TDA8567Q. GENERAL DESCRIPTION The TDA8569Q is an integrated class-B output amplifier in a 23-lead Single-In-Line (SIL) plastic power package. It contains four amplifiers in BTL configuration, each with a gain of 26 dB. The output power is 4 × 25 W in a 4 Ω load. APPLICATIONS • The device is primarily developed for car radio applications. QUICK REFERENCE DATA ORDERING INFORMATION SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP operating supply voltage 6 14.4 18 V IORM repetitive peak output current − − 7.5 A Iq(tot) total quiescent current − 230 − mA Istb standby current − 0.2 100 µA Isw switch-on current − − 80 µA Zi input impedance 25 30 − kΩ Po output power THD = 10% − 25 − W SVRR supply voltage ripple rejection Rs = 0 Ω − 60 − dB αcs channel separation Rs = 10 kΩ − 50 − dB Gv closed loop voltage gain 25 26 27 dB Vn(o) noise output voltage Rs = 0 Ω − − 120 µV ∆VO DC output offset voltage − − 150 mV TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION TDA8569Q DBS23P plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 1997 Mar 27 3 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q BLOCK DIAGRAM Fig.1 Block diagram. handbook, full pagewidth MBK010 OUT1+ OUT1− + − + − Vref 2IN1 IN2 4 23168115 10 MODE VP1 VP2 VP3 VP4 211863 PGND1 PGND2 PGND3 PGND4 30 kΩ OUT2+ OUT2− + − + − 7 5 11 30 kΩ OUT3+ OUT3− + − + − Vref 17IN3 SGND TDA8569Q IN4 19 13 12 30 kΩ OUT4+ OUT4− + − + − 22 20 14 30 kΩ VDIAGDIAGNOSTIC 9 1997 Mar 27 4 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q PINNING SYMBOL PIN DESCRIPTION VP1 1 supply voltage 1 OUT1+ 2 output 1+ PGND1 3 power ground 1 OUT1− 4 output 1− OUT2− 5 output 2− PGND2 6 power ground 2 OUT2+ 7 output 2+ VP2 8 supply voltage 2 VDIAG 9 diagnostic output IN1 10 input 1 IN2 11 input 2 SGND 12 signal ground IN3 13 input 3 IN4 14 input 4 MODE 15 mode select switch input VP3 16 supply voltage 3 OUT3+ 17 output 3+ PGND3 18 power ground 3 OUT3− 19 output 3− OUT4− 20 output 4− PGND4 21 power ground 4 OUT4+ 22 output 4+ VP4 23 supply voltage 4 Fig.2 Pin configuration. handbook, halfpage TDA8569Q MBK009 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 VP1 OUT1+ PGND1 OUT1− OUT2− PGND2 OUT2+ VP2 VDIAG IN1 IN2 SGND IN3 IN4 MODE VP3 OUT3+ PGND3 OUT3− OUT4− PGND4 OUT4+ VP4 1997 Mar 27 5 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q FUNCTIONAL DESCRIPTION The TDA8569Q contains four identical amplifiers which can be used for bridge applications. The gain of each amplifier is fixed at 26 dB. Mode select switch (pin 15) • Standby: low supply current (<100 µA) • Mute: input signal suppressed • Operating: normal on condition. Since this pin has a low input current (<80 µA), a low cost supply switch can be applied. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during ≥150 ms (charging of the input capacitors at pins 10, 11, 13 and 14). This can be realized by: • Microprocessor control • External timing circuit (see Fig.3). Diagnostic output (pin 9) DYNAMIC DISTORTION DETECTOR (DDD) At the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin 9 goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and so limit the distortion. The output level of pin 9 is independent of the number of channels that are clipping (see Fig.4). SHORT-CIRCUIT DIAGNOSTIC When a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 10 ms after removal of the short-circuit. During this short-circuit condition, pin 9 is continuously LOW. When a short-circuit occurs across the load of one or more channels, the output stages are switched off during approximately 10 ms. After that time it is checked during approximately 50 µs to determine whether the short-circuit is still present. Due to this duty cycle of 50 µs/10 ms the average current consumption during this short-circuit condition is very low. During this short-circuit condition, pin 9 is LOW for 10 ms and HIGH for 50 µs (see Fig.5). The protection circuits of all channels are coupled. This means that if a short-circuit condition occurs in one of the channels, all channels are switched off. Consequently, the power dissipation in any short-circuit condition is very low. TEMPERATURE PRE-WARNING When the virtual junction temperature Tvj reaches 145 °C, pin 9 goes LOW. OPEN COLLECTOR OUTPUTS The diagnostic pin has an open collector output, so more devices can be tied together. An external pull-up resistor is needed. Fig.3 Mode select switch circuitry. handbook, halfpage 100 kΩ MGA708 47 µF 10 kΩ 10 kΩ mode select switch VP Fig.4 Distortion detector waveform. handbook, halfpage V9 0 VP Vo 0 t MGG155 1997 Mar 27 6 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q Fig.5 Short-circuit waveform. handbook, full pagewidth MGG156 short-circuit over the load 10 ms 50 µs t t VP short circuit current V9 1997 Mar 27 7 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VP supply voltage operating − 18 V non-operating − 30 V load dump protection; during 50 ms; tr ≥ 2.5 ms − 45 V Vsc(safe) short-circuit safe voltage − 18 V Vrp reverse polarity voltage − 6 V IOSM non-repetitive peak output current − 10 A IORM repetitive peak output current − 7.5 A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 40 K/W Rth j-c thermal resistance from junction to case (see Fig.6) 1 K/W Fig.6 Equivalent thermal resistance network. handbook, halfpage 3.2 K/W 0.2 K/W 3.2 K/W3.2 K/W 3.2 K/W virtual junction OUT1 OUT2 OUT3 OUT4 case MGG157 1997 Mar 27 8 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified. Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. At 18 V < VP < 30 V the DC output voltage ≤ 1⁄2VP. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 6 14.4 18 V Iq(tot) total quiescent current RL = ∞ − 230 360 mA Operating condition V15 mode select switch level 8.5 − VP V I15 mode select switch current V15 = 14.4 V − 30 80 µA VO output voltage note 2 − 7.0 − V ∆VO output offset voltage − − 150 mV Mute condition V15 mode select switch level 3.3 − 6.4 V VO output voltage note 2 − 7.0 − V ∆VO output offset voltage − − 150 mV Standby condition V15 mode select switch level 0 − 2 V Istb standby current − 0.2 100 µA Diagnostic V9 diagnostic output voltage during any fault condition − − 0.6 V Tvj temperature pre-warning V9 = 0.6 V − 145 − °C 1997 Mar 27 9 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.7; unless otherwise specified. Notes 1. Frequency response externally fixed. 2. Vripple = Vripple(max) = 2 V (p-p); Rs = 0 Ω. 3. B = 20 Hz to 20 kHz; Rs = 0 Ω. 4. B = 20 Hz to 20 kHz; Rs = 10 kΩ. 5. B = 20 Hz to 20 kHz; independent of Rs. 6. PO = 16 W; Rs = 10 kΩ. 7. Vi = Vi(max) = 1 V (RMS). 8. Dynamic Distortion Detector (DDD) active, pin 9 is set to logic 0. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Po output power THD = 0.5% 16 19 − W THD = 10% 21 25 − W THD = 30% 28 35 − W VP = 13.2 V; THD = 0.5% − 15 − W VP = 13.2 V; THD = 10% − 21 − W THD total harmonic distortion Po = 1 W − 0.05 − % V9 ≤ 0.6 V; note 8 − 10 − % Bp power bandwidth THD = 0.5%; Po = −1 dB with respect to 16 W − 20 to 20000 − Hz fro(l) low frequency roll-off at −1 dB; note 1 − 25 − Hz fro(h) high frequency roll-off at −1 dB 20 − − kHz Gv closed loop voltage gain 25 26 27 dB SVRR supply voltage ripple rejection on; note 2 50 − − dB mute; note 2 50 − − dB standby; note 2 80 − − dB Zi input impedance 25 30 38 kΩ Vn(o) noise output voltage on; note 3 − 85 120 µV on; note 4 − 100 − µV mute; note 5 − 60 − µV αcs channel separation note 6 45 − − dB ∆Gv channel unbalance − − 1 dB Vo output signal in mute note 7 − − 2 mV Po output power THD = 0.5%; RL = 2 Ω − 30 − W THD = 10%; RL = 2 Ω − 40 − W THD = 30%; RL = 2 Ω − 55 − W THD total harmonic distortion Po = 1 W; RL = 2 Ω − 0.1 − % 1997 Mar 27 10 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q TEST AND APPLICATION INFORMATION Fig.7 Application circuit diagram. Special care must be taken in the PCB-layout to separate pin 9 from the pins 10, 11 13 and 14 to minimize the crosstalk between the clip output and the inputs. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during a period of ≥150 ms (charging the input capacitors at pin 10, 11, 13 and 14). handbook, full pagewidth MBK011 OUT1+ RL = 4 Ω OUT1− + − + − Vref 2 IN1input 1 IN2input 2 4 15 10 MODE 2200 µF100 nF 23 +14.4 V 1681 VP1 VP2 VP3 VP4 VP 30 kΩ OUT2+ RL = 4 Ω OUT2− + − + − 7 5 11 30 kΩ 470 nF 470 nF 470 nF 470 nF 211863 PGND1 PGND2 PGND3 PGND4 power ground (substrate) OUT3+ RL = 4 Ω OUT3− + − + − Vref 17 IN3 SGND TDA8569Q input 3 IN4input 4 19 13 12 30 kΩ OUT4+ RL = 4 Ω OUT4− + − + − 22 20 14 30 kΩ 10 kΩ VDIAG +VP DIAGNOSTIC diagnostic output 9 1997 Mar 27 11 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q Test information Figures 8 to 13 have the following conditions: VP = 14.4 V; RL = 4 Ω; f = 1 kHz; 80 kHz filter used; unless otherwise specified. Fig.8 IP as a function of VP. handbook, halfpage 0 300 200 100 0 4 VP (V) IP (mA) 208 12 16 MGD921 Fig.9 Po as a function of VP. (1) EIAJ. (2) 10%. (3) 0.5%. handbook, halfpage 8 18 60 0 (1) (2) (3)20 40 10 Po (W) VP (V) 12 14 16 MGD922 Fig.10 THD + N as a function of Po. handbook, halfpage 10 1 Po (W) 10−1 10−2 MBK008 10−110−2 1 10 102 THD+N (%) 1 kHz f = 10 kHz 100 Hz Fig.11 THD + N as a function of frequency. handbook, halfpage 10 1 f (Hz) 10−1 10−2 MGD924 10 102 103 104 105 THD+N (%) 10 W 1 W 1997 Mar 27 12 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q Fig.12 SVRR as a function of frequency. handbook, halfpage −90 −70 −50 −30 MGD925 10 f (Hz) SVRR (dB) 102 103 104 105 Fig.13 Channel separation as a function of frequency. (1) channel 1 ⇔ channel 2, channel 3 ⇔ channel 4. (2) channels 1 and 2 ⇔ channels 3 and 4. handbook, halfpage −90 −70 −50 −30 MGD926 10 (1) (2) f (Hz) αcs (dB) 102 103 104 105 (1) f = 10 kHz. (2) f = 1 Hz. (3) f = 100 Hz. Fig.14 THD + N as a function of Po; RL = 2 Ω. handbook, full pagewidth 102 MLB667 10110 1 10 2 10 1 10 P (W)o10 2 1 10 2 THD (%) (1) (2) (3) 1997 Mar 27 13 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q Fig.15 Output power as a function of supply voltage; RL = 2 Ω. (1) THD = 30%. (2) THD = 10%. (3) THD = 0.5%. handbook, full pagewidth 18 70 0 8 10 12 14 16 MGA905 10 20 30 40 Po (W) V (V)P (3) (2) 50 60 (1) 1997 Mar 27 14 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q PCB layout Fig.16 PCB layout (component side). handbook, full pagewidth MGK079 Pgnd 2200 µF 100 nF 470 nF 10 kΩ diag in 1 2 3 4 in mode out 4 out 3 sgnd 470 nF out1 out2 VP − + − + − + − + − 78.74 111.76 Dimensions in mm. 1997 Mar 27 15 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q Fig.17 PCB layout (soldering side). handbook, full pagewidth MGK080 Pgnd 2200 µF100nF 470 nF 10 kΩ diagin 1234 inmode out 4 out 3 sgnd 470 nF out1 out2 VP − + − + − + − + − 78.74 111.76 Dimensions in mm. 1997 Mar 27 16 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q PACKAGE OUTLINE UNIT A2 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 4.6 4.3 A4 1.15 0.85 A5 1.65 1.35 DIMENSIONS (mm are the original dimensions) Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. SOT411-1 96-10-11 0 5 10 mm scale D L L1 L2 E2 E c A4 A5 A2 m L3 E1 Q w M bp 1 d Z e 2ee 1 23 j DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 v M Dx h Eh non-concave view B: mounting base side B β e 1bp c D(1) E(1) Z(1)d eDh L L3 m 0.75 0.60 0.55 0.35 30.4 29.9 28.0 27.5 12 2.54 12.2 11.8 10.15 9.851.27 e 2 5.08 2.4 1.6 Eh 6 E1 14.0 13.0 L 1 10.7 9.9 L 2 6.2 5.8 E2 1.43 0.78 2.1 1.8 1.85 1.65 4.3 3.6 2.8 Qj 0.25 w 0.6 v 0.03 x 45° β 1997 Mar 27 17 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. 1997 Mar 27 18 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q NOTES 1997 Mar 27 19 Philips Semiconductors Preliminary specification 4 × 25 W BTL quad car radio power amplifier TDA8569Q NOTES Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 287
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