超低压超大电流MOSFET

04/20/2010 IRFH6200PbF HEXFET��Power MOSFET Notes�� through � are on page 8 ���������� Features and Benefits www.irf.com 1 PQFN 5X6 mm Note Form Quantity IRFH6200TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH6200TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Orderable part number Package Type Standard Pack Applications • �� ���������� �� ������� ������������������������ • ���������� ��������� �������!��"� Features Resulting Benefits Low RDSon (≤ 1.20mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (≤ 0.5°C/W) Enable better thermal dissipation Low Profile (≤ 0.9 mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier VDS 20 V RDS(on) max (@VGS = 4.5V) 1.20 mΩ RDS(on) max (@VGS = 2.5V) 1.50 mΩ Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V IDM Pulsed Drain Current � PD @TA = 25°C Power Dissipation � PD @TC(Bottom) = 25°C Power Dissipation � Linear Derating Factor � W/°C TJ Operating Junction and TSTG Storage Temperature Range -55 to + 150 3.6 0.029 250 Max. 45 100 400 ±12 20 36 100 V W A °C ��������� � 2 www.irf.com S D G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case � ––– 0.5 RθJC (Top) Junction-to-Case � ––– 15 °C/W RθJA Junction-to-Ambient � ––– 35 RθJA (<10s) Junction-to-Ambient � ––– 22 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 6.4 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 0.80 1.20 ––– 1.10 1.50 VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 260 ––– ––– S Qg Total Gate Charge ––– 155 230 VDS = 10V Qgs Gate-to-Source Charge ––– 22 ––– Qgd Gate-to-Drain Charge ––– 53 ––– RG Gate Resistance ––– 1.3 ––– Ω td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 74 ––– td(off) Turn-Off Delay Time ––– 140 ––– tf Fall Time ––– 160 ––– Ciss Input Capacitance ––– 10890 ––– Coss Output Capacitance ––– 2890 ––– Crss Reverse Transfer Capacitance ––– 2180 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy � mJ IAR Avalanche Current � A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)�� VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 86 130 ns Qrr Reverse Recovery Charge ––– 350 525 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance MOSFET symbol nA ns A pF nC VGS = 4.5V ––– VGS = 12V VGS = -12V ––– ––– 400 ––– ––– 100 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 50A � Conditions See Fig.15 Max. 780 30 ƒ = 1.0MHz TJ = 25°C, IF = 50A, VDD = 10V di/dt = 260A/µs �� TJ = 25°C, IS = 50A, VGS = 0V � showing the integral reverse p-n junction diode. ––– RG=1.0Ω VDS = 10V, ID = 50A VDS = 16V, VGS = 0V, TJ = 125°C µA ID = 50A (See Fig.17 & 18) ID = 50A VGS = 0V VDS = 10V VDS = 16V, VGS = 0V VDS = VGS, ID = 150µA VGS = 2.5V, ID = 50A � Typ. mΩ VDD = 10V, VGS = 4.5V ��������� � www.irf.com 3 Fig 4. Normalized On-Resistance vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 6. Typical Gate Charge vs.Gate-to-Source VoltageFig 5. Typical Capacitance vs.Drain-to-Source Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V BOTTOM 1.3V ≤60µs PULSE WIDTH Tj = 25°C 1.3V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 1.3V ≤60µs PULSE WIDTH Tj = 150°C VGS TOP 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V BOTTOM 1.3V 0.5 1.0 1.5 2.0 2.5 VGS, Gate-to-Source Voltage (V) 1.0 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 25°C TJ = 175°C VDS = 50V ≤60µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.6 0.8 1.0 1.2 1.4 1.6 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 50A VGS = 4.5V 1 10 100 VDS, Drain-to-Source Voltage (V) 1000 10000 100000 C , C ap ac ita nc e (p F ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 100 200 300 400 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 16V VDS= 10V ID= 50A ��������� � 4 www.irf.com Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) Fig 8. Maximum Safe Operating Area Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 7. Typical Source-Drain Diode Forward Voltage Fig 10. Threshold Voltage vs. Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1.0 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 150°C VGS = 0V 0 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25°C Tj = 150°C Single Pulse 100µsec1msec 10msec DC -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V G S (t h) , G at e th re sh ol d V ol ta ge ( V ) ID = 150µA ID = 500µA ID = 1.0mA ID = 1.0A 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 1 T he rm al R es po ns e ( Z th JC ) ° C /W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 25 50 75 100 125 150 TC , Case Temperature (°C) 0 100 200 300 400 I D , D ra in C ur re nt ( A ) Limited By Package ��������� � www.irf.com 5 Fig 13. Maximum Avalanche Energy vs. Drain CurrentFig 12. On-Resistance vs. Gate Voltage Fig 14b. Unclamped Inductive WaveformsFig 14a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms VGS VDS 90% 10% td(on) td(off)tr tf ��� ������ �� �≤ 1 �� ������������≤ 0.1 �� ��� �� ������ ��� + -��� ��� 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 500 1000 1500 2000 2500 3000 3500 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 19A 21A BOTTOM 30A 0 2 4 6 8 10 12 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (m Ω ) ID = 50A TJ = 25°C TJ = 125°C ��������� � 6 www.irf.com Fig 16. ���#�������$���%�����%&���'���� ���"���for N-Channel HEXFET��Power MOSFETs Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr � ��� ������������� ����� ��� • ��������������������� �� • ������������ �� • ���������������������� ������������������������� P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W.Period ( ��� �� � � � ��� ����� ������� ( + - + + +- - - � � � �� ���• � !��������������"��#� • �� ����������$������%&%�% • ���������������"��������������'�' • �%&%�%�(��� ���&��������� ����� � 1K VCC DUT 0 L S ��������� � www.irf.com 7 PQFN 5x6 Outline "B" Package Details ���� �� ��� � � �� � � ���� ����� � ������� �� �� ��� ������� �� ��� �� ������� �� � � ���������� � http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ PQFN 5x6 Outline "B" Part Marking XXXX XYWWX XXXXX INTERNATIONAL RECTIFIER LOGO PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) ASSEMBLY SITE CODE (Per SCOP 200-002) DATE CODE PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) ��������� � 8 www.irf.com � Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability �� Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ��� Applicable version of JEDEC standard at the time of product release. �� ��� � Repetitive rating; pulse width limited by max. junction temperature. � Starting TJ = 25°C, L = 1.7mH, RG = 25Ω, IAS = 30A. � Pulse width ≤ 400µs; duty cycle ≤ 2%. � Rθ is measured at ������������ ��� ������� � When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2010 Data and specifications subject to change without notice. PQFN 5x6 Outline "B" Tape and Reel MS L1 (per JEDEC J-S T D-020D††† ) RoHS compliant Yes PQFN 5mm x 6mm Qualification information† Moisture Sensitivity Level Qualification level Industrial†† (per JEDEC JES D47F ††† guidelines )