D2012 ETC

YOUDA TRANSISTOR D2012 Si NPN TRANSISTOR—D2012 DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN CONFIGURATIONS PIN SYMBOL 1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS (Tamb=25℃) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage BVCBO 60 V Collector-Emitter Voltage BVCEO 50 V Emitter-Base Voltage BVEBO 7 V Tcase=25℃ 30 W Collector Dissipation Tamb=25℃ PCM 1.5 W DC ICM 3 A Collector Current Pulse Icp 7 A Base Current IB 0.6 A Junction Temperature Tj +150 ℃ Storage Temperature Tstg -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃,all voltage referenced to GND Unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VcB=50V, IE=0 100 nA Emitter Cut-Off Current IEBO VEB=5V, IC=0 100 nA hFE1 VcE=5V, IC=20mA 30 200 DC Current Gain hFE2 VcE=5V, IC=0.5A 100 400 Collector-Emitter Saturation Voltage VCE(sat) Ic=3A, IB=0.3A 0.3 0.5 V Base-Emitter Saturation Voltage VBE(sat) Ic=2A, IB=0.2A 1.0 2.0 V Current Gain Bandwidth Product fT VcE=5V, IC=0.1A 5 MHz Output Capacitance Cob VcB=10V, IE=0,f=1MHz 80 pF CLASSIFICATION OF hFE RANK Q P E RANGE 100～200 160～320 200～400 WuXi YouDa Electronics Co., Ltd Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110 Website: www.e-youda.com SHENZHEN OFFICE Tel： 86-755-83740369 13823533350 Fax： 86-755-83741418 Ver 3.1 1 of 1 2004-9-20