生长温度对MOCVD外延生长InGaN的影响

? 28 ? ?? 2007 ? 9 ? ? ? C H IN E SE J O U R N A L SE M ICO NDU CT O R S ? OF? ? Vol.28 Supplement Sep. .2007 生长温度对 MOCVD 外延生长 InGaN 的影响‘ ????? ? ? ? ? ? ??? (??????????? ???????????? ? ? ??? J?? 100083 ) ?? : ????????????(MOCVD)??，? GaN/ ??????????? InGaN ??，????? ???? InGaN ??? In??、????????????.??????????????，InGaN???? In????，?????????. X????(XRD)???????????? In ????至0. 57 ???? ???????，?致??(PL)????????InGaN ???PL ???? In????????????，? ???? In ???????. ??? : InGaN; X ???? ; ?致?? PACC : 7850G ; 6110 ; 7855 ?????: TN304. 2` 3 ????? : A ???? : 0253-4177(2007)SO-0257-03 3 ????? ?1 ???? 550- 700????????? ? XRD ??? InGaN ???? In ???(0002) ????????(FWHM)????????.? ??????，In ????????????? ?，????????????????，???? ?? InGaN????? In ?????????. ????? In- N ??????，?? In ??? ???????????????????，?? ~“ ? n ‘ ? 4 ?0 11 ? : 0 0 1 ?? III ??????????????，???? ??????，??????????????? ???????.??? InGaN ???????， ?????????0. 7eV???3. 4eV"l ，?? ????????????，????LED,LD? ????????，????????????? ???，??????????.??，????? ????????，?? In ?? InGaN ???? ?????，?????? InGaN ????? In ????????，?????????〔2--4] .?? ????? MOCVD ?? InGaN ??????? ??????????????，??????? ??? InGaN ??? In ??、???????? ?????. ??，???致???(P L)??? InGaN ??? ???? . ︾ ? H ? ﹂ 0 0 ? 、 ??2 ?? ?????? MOCVD ??????，??? ??????? 1 ????，????? 550- 7001C ，?????? (NH3) ?? N ?，???? (TEG)?????(TMI)????Ga ?? In ?， ?????.???????????(0001)?? ???????????31, m ?GaN，???? ??????? 200nm ? InGaN.?? X ??? ???(DC-XRD)????? In ??????? ，????????????( ???:60506001,60576003) ??????Email..wangll) red.semi.ac.cn 2006-11-20 ??，2006-12-08?? ? ‘ ， .? : 0 ? U u o???od? s ul 0' we ' ，?‘??，???，?:- ‘- ??; ? 0 ; U 0 U 0 C J U / W Gro wth temperature/1C ? 1 In ??? Fig. 1 F W H M ??? XRD(0002)?????FWHM????? Temperature-dependent In composition and o f ( 0002 ) ) 2007 ?????? ? ? ? ? ? ? 28 ? x = 0 .0 5 T-- 10 K x = 0 . 16 ?? ~5‘。??1 X-- 0 3 I 1.2 . 2.4 2.8 3.2 3? EnergyleV 3.sfi b) ‘L r L we ? ，‘ . ? ﹄、 ? 0 11 ? ， ‘ ， ‘ ‘， .? > ? ?? 。 u? ?Ref [5) ?Ref.[61 . This work n ︶ ?、 J ? . 1 0 ????? In ?????????????. XRD(0002)?????????????? ????。??1??，(0002)????????? ?????????，?? InGaN??????? ???????????? ??，????，In ? ?????致 In, Ga，?:N ???GaN ????? ??，???? In.Ga,??N ????????? ?;????，?????????，?????? ?????，??????????????，?? ??? InxGa，??N?????， ?2 ? In ??? 0. 57 ? InGaN ? XRD (0002)cu-28???，????????????? ?，?????? GaN ??((34. 56' ) ????，? ???? InGaN (32. 50) ???，???? InN (31. 50)???. ???????????，?? Vigard???????? In ????0. 57. ?? 2 ????，??? In ???? 0. 57 ????? ??????，??????????????? ???? InGaN ? In ???， 0 0 .2 0.4Inco 0 .6 0? 1.0 ?. 、 ?a ‘? 《) a 、 . ? 三土一 」? I . ， i_ 1 . I ? 。 t ?3 (a) T ?10K??? In ??? In. Ga, _, N ??? PL ? ; (b) In. Ga:?: N??PL ????? In?????(?? ?????[[5.6〕?????) Fig. 3 (a) PL spectra of In. Gal??N samples at T = 10K; (b) PL peak energy of InsGal?:N studied in this work and from Refs. [5,6] as a function of In compo- sit ion ? ~?u? ul 31 32 33 34 35 36 20/(0) ?2 1110.5zGao.43N ?XRD (0002) c- 26??? Fig. 2 XRD (0002) ar 28 diffract ion spectru m of Ino.s7G ao.43N GaN???????，In ????? 1 ?( InN) , PL ?????????，??????????? ?，????????????，???????? ?? In ???0. 57 ?? InGaN?????。 O n O ? ? ?“ ? ~ ， ~ ， ? ? .1 > ?? ~? ? ? ? ? 3 ( a) ??? T ?10K ?，?? In ??? InxGa,, N???PL ?.???In ?????，PL ?????????，?3(b)???PL ???? ? In ?????，?????????????? ??????[[5.61?????。?????3(b)? ??????Eg=3. 5?2. 5x?bx(I ?x)??? ??，????????????? b= 2. 5eV. ?4 ??? InGaN???致??????? ? In ?????.?? In ??((0< x< l )???， PL ???????。?? ? ????????? ?????，In ?????????????? ?，????? In, Gal??N ???GaN ???? ???，?????致???????，?? In- In composition ?4 InxGa，?: N???致???????? In ????? Fig. 4 FWHM of In. Ga,??N samples as a function of In composition ? ? ????: ????? MOCVD ???? InGaN ??? 25 9 4 ?? ??????????MOCVD ?? InGaN ???.????????? InGaN ??? In ? ?，?????????? In ???????? InGaN ?????. XRD ???????，??? In ????至 0. 57 ? InGaN ???????? ??. PL ????????，InGaN ??? PL ? ??? In ????????????，????? In ????????. ???? [ 1 ] Wu J ,Walukiewicz W,Li S X,et al.Effects of electron con- centration on the optical absorption edge of InN.App[ Phys Lett ,2004 , 84 : 2805 [ 2〕 Ho I H, Stringfellow G B. Solid phase immiscibility in GaInN.Appl Phys Lett , 1996 ,69;2701 [ 3〕 Shimizu M,Kawaguchi Y,Hiramatsu K,et al.Metalorganic vapor phase epitaxy of thick InGaN on sapphire substrate . Jpn J Appl Phys, 1997,36 :3381 〔4〕 Chang C A, Shih C F ,Chen N C, et al. In-rich In??Ga,N films by metalorganic vapor phase epitaxy.Appl Phys Lett , 2004 , 85 :6 131 [ 5〕 Davydov V Y,Klochikhin A A,Emtsev V V,et al. Band gap of InN and In-Rich InrGal?: N alloys (0. 36< x < 1) . Phys Status Solidi B, 2002 , 230 :4 [ 6〕 KimMH,Cho J K, Lee I H, et al. Metalorganic molecular beam epitaxy of InGaN layers and their optical properties. Phys Status Solidi A , 1999 , 176 :269 Influence of Temperature on MOCVD Growth of InGaN Wang Lili' ，Wang Hui , Sun Xian, Wang Hai , Zhu Jianjun, (State Key Laboratory of Integrated Optoelectronics , Institute Chinese Academy of Sciences , Beijing 100083, Yang Hui , and Liang Junwu of Semiconductors , Ch in a ) Abstract ; InGaN thin films are grown on GaN/sapphire composite substrate by metalorganic chemical vapor deposition (MOCVD) between 550C and 700 C .The effect of growth temperature on the properties of the InGaN films is studied by means of X-ray diffraction (XRD) and photoluminescence (PL) . InGaN with higher In composition was obtained at a lower temperature .However , low growth temperature and high In composition degrade the crystal quality of InGaN. The XRD measurement indicated that there is no phase separation in the sample with In composition as high as 0. 57.The PL peak en- ergy shifts to lower energy with increasing In composition ,and the full width at half width (FWHM) of the PL peak increa- ses with increasing In composition . Key words ; InGaN; X-ray diffraction; photoluminescence 7850G ; 6110 ; 7855 Article ID : 0253-4177 (2007) SO-0257-03 * Project supported by the National Natural Science Foundation of China (Nos.60506001，60576003) ?Corresponding author.Email ..wangll@red. semi .ac. cn Received 20 November 2006 ,revised manuscript received 8 December 2006 ) 2007 Chinese Institute of Electronics